Document
Features
■ On-state current (IT(RMS)): 25 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 150 mA ■ Commutation @ 10 V/µs: up to 88 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package:
– 2,500 V rms (UL recognized: E81734).
Description
The TPDVxx25 series use high performance alternistor technology.
Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans).
Table 1. Device summary Parameter
TPDV825RG
Blocking voltage VDRM/VRRM On-state current IT(RMS) Gate current IGT
800 V
TPDVxx25
25 A high voltage Triacs
A2
G A1
A1 A2 G TOP3 insulated
TPDV1025RG 1000 V 25 A 150 mA
TPDV1225RG 1200 V
January 2012
Doc ID 18268 Rev 2
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Characteristics
1
Characteristics
TPDVxx25
Table 2. Absolute maximum ratings (limiting values)
Symbol
Parameter
IT(RMS)
ITSM
I2t dI/dt
VDRM VRRM
On-state rms current (180° conduction angle)
Non repetitive surge peak on-state current
I2t value for fusing Critical rate of rise of on-state current IG = 500 mA, dIG/dt = 1 A/µs
tp = 2.5 ms tp = 8.3 ms tp = 10 ms tp = 10 ms
F = 50 Hz
TPDV825
Repetitive peak off-state voltage
TPDV1025
TPDV1225
Tstg Tj
VINS(RMS)(1)
Storage junction temperature range Operating junction temperature range
Insulation rms voltage
1. A1, A2, gate terminals to case for 1 minute
Tc = 85 °C Tj = 25 °C Tj = 25 °C
Tj = 125 °C
Value
Unit
25
A
390
250
A
230
265
A2S
100
A/µs
800
1000
V
1200
- 40 to + 150 °C
- 40 to + 125
2500
V
Table 3. Symbol
Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
Value Unit
IGT VGT VGD tgt IH (1)
VD = 12 V DC, RL = 33 Ω
VD = VDRM RL = 3.3 kΩ VD = VDRM IG = 500 mA dIG/dt = 3 A/µs IT = 500 mA Gate open
IL
IG = 1.2 x IGT
dV/dt VTM (1) Vto(1) Rd(1)
Linear slope up to: VD = 67% VDRM Gate open ITM = 35 A tp = 380 µs Threshold voltage Dynamic resistance
IDRM IRRM
VDRM = VRRM
(dV/dt)c = 200 V/µs (dI/dt)c (1)
(dV/dt)c = 10 V/µs
Tj = 125 °C
Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C
I - II - III I - II - III I - II - III
I - III II
MAX. 150
MAX. 1.5
MIN. 0.2
TYP. 2.5
TYP. 50
100 TYP.
200
MIN. 2000
MAX. 1.8
MAX. 1.1
MAX. 19
20 MAX.
8
20 MIN.
88
mA V V µs mA
mA
V/µs V V mΩ µA mA
A/ms
1. For either polarity of electrode A2 voltage with reference to electrode A1.
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Doc ID 18268 Rev 2
TPDVxx25
Characteristics
Table 4. Gate characteristics (maximum values)
Symbol
Parameter
PG(AV) PGM IGM VGM
Average gate power dissipation Peak gate power dissipation Peak gate current Peak positive gate voltage
tp = 20 µs tp = 20 µs tp = 20 µs
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-a) Rth(j-c) DC Rth(j-c) AC
Junction to ambient Junction to case for DC Junction to case for 360 °Conduction angle (F = 50 Hz)
Value
Unit
1
W
40
W
8
A
16
V
Value 50 1.5 1.1
Unit °C/W °C/W °C/W
Figure 1.
P(W)
40
Max. rms power dissipation versus Figure 2. on-state rms current (F = 50Hz). (curves limited by (dI/dt)c)
Max. rms power dissipation and max. allowable temperatures (Tamb and Tcase) for various Rth
P(W)
40 Rth case to ambient - Rth = 1.5°C/W
Rth = 1°C/W Rth = 0.5°C/W Rth = 0°C/W
Tcase(°C)
85
30
20
10
0 0
α = 120°
α = 180°
α = 60° α = 30°
α = 90°
IT(RMS)(A)
5
10
15
180°
α α
20
25
30
95
20
105
10
115
Tamb(°C)
0
125
0
20
40
60
80
100
120
140
Figure 3. On-state rms current versus case Figure 4. Relative variation of thermal
temperature
impedance versus pulse duration
IT(RMS)(A)
30
25
α = 180°
K=[Zth(j-c)/Rth(j-c)]
1.00
Zth(j-c)
20
0.10
15
Zth(j-a)
10
0.01
5
Tcase(°C)
tp(s)
0
0.0
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 1E+3
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Characteristics
TPDVxx25
Figure 5.
Relative variation of gate trigger Figure 6. current and holding current versus junction temperature
Non repetitive surge peak on-state current versus number of cycles
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2
1.5
IGT
1
IH & IL
ITSM(A)
200
150
100
Tj initial=25°C
t = 20 ms One cycle
50 0.5
Tj(°C)
0
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
1
Number of cycles
10
100
1000
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse and corresponding values of I2t
On-state characteristics (maximum values)
ITSM(A), I2t (A2s)
1000
ITSM
Tj initial = 25°C
ITM(A)
1000
100 Tj=max
I2t
100 1
tp(ms)
2
5
10
1
10
1
Tj=25°C
VTM(V)
2
3
4
Tj max.: Vt0=1.1V Rd=19mΩ
5
6
Figure 9. Safe turn-off operating area
(dV/dt)c(V/µs)
1000
100
Tj initial = 25°C
10
(dI/dt)c(A/ms)
1
1
10
100
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