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TPDV1225 Dataheets PDF



Part Number TPDV1225
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 25A high-voltage Triacs
Datasheet TPDV1225 DatasheetTPDV1225 Datasheet (PDF)

Features ■ On-state current (IT(RMS)): 25 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 150 mA ■ Commutation @ 10 V/µs: up to 88 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). Description The TPDVxx25 series use high performance alternistor technology. Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...).

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Features ■ On-state current (IT(RMS)): 25 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 150 mA ■ Commutation @ 10 V/µs: up to 88 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). Description The TPDVxx25 series use high performance alternistor technology. Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. Device summary Parameter TPDV825RG Blocking voltage VDRM/VRRM On-state current IT(RMS) Gate current IGT 800 V TPDVxx25 25 A high voltage Triacs A2 G A1 A1 A2 G TOP3 insulated TPDV1025RG 1000 V 25 A 150 mA TPDV1225RG 1200 V January 2012 Doc ID 18268 Rev 2 1/7 www.st.com 7 Characteristics 1 Characteristics TPDVxx25 Table 2. Absolute maximum ratings (limiting values) Symbol Parameter IT(RMS) ITSM I2t dI/dt VDRM VRRM On-state rms current (180° conduction angle) Non repetitive surge peak on-state current I2t value for fusing Critical rate of rise of on-state current IG = 500 mA, dIG/dt = 1 A/µs tp = 2.5 ms tp = 8.3 ms tp = 10 ms tp = 10 ms F = 50 Hz TPDV825 Repetitive peak off-state voltage TPDV1025 TPDV1225 Tstg Tj VINS(RMS)(1) Storage junction temperature range Operating junction temperature range Insulation rms voltage 1. A1, A2, gate terminals to case for 1 minute Tc = 85 °C Tj = 25 °C Tj = 25 °C Tj = 125 °C Value Unit 25 A 390 250 A 230 265 A2S 100 A/µs 800 1000 V 1200 - 40 to + 150 °C - 40 to + 125 2500 V Table 3. Symbol Electrical Characteristics (Tj = 25 °C, unless otherwise specified) Test conditions Quadrant Value Unit IGT VGT VGD tgt IH (1) VD = 12 V DC, RL = 33 Ω VD = VDRM RL = 3.3 kΩ VD = VDRM IG = 500 mA dIG/dt = 3 A/µs IT = 500 mA Gate open IL IG = 1.2 x IGT dV/dt VTM (1) Vto(1) Rd(1) Linear slope up to: VD = 67% VDRM Gate open ITM = 35 A tp = 380 µs Threshold voltage Dynamic resistance IDRM IRRM VDRM = VRRM (dV/dt)c = 200 V/µs (dI/dt)c (1) (dV/dt)c = 10 V/µs Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C I - II - III I - II - III I - II - III I - III II MAX. 150 MAX. 1.5 MIN. 0.2 TYP. 2.5 TYP. 50 100 TYP. 200 MIN. 2000 MAX. 1.8 MAX. 1.1 MAX. 19 20 MAX. 8 20 MIN. 88 mA V V µs mA mA V/µs V V mΩ µA mA A/ms 1. For either polarity of electrode A2 voltage with reference to electrode A1. 2/7 Doc ID 18268 Rev 2 TPDVxx25 Characteristics Table 4. Gate characteristics (maximum values) Symbol Parameter PG(AV) PGM IGM VGM Average gate power dissipation Peak gate power dissipation Peak gate current Peak positive gate voltage tp = 20 µs tp = 20 µs tp = 20 µs Table 5. Thermal resistance Symbol Parameter Rth(j-a) Rth(j-c) DC Rth(j-c) AC Junction to ambient Junction to case for DC Junction to case for 360 °Conduction angle (F = 50 Hz) Value Unit 1 W 40 W 8 A 16 V Value 50 1.5 1.1 Unit °C/W °C/W °C/W Figure 1. P(W) 40 Max. rms power dissipation versus Figure 2. on-state rms current (F = 50Hz). (curves limited by (dI/dt)c) Max. rms power dissipation and max. allowable temperatures (Tamb and Tcase) for various Rth P(W) 40 Rth case to ambient - Rth = 1.5°C/W Rth = 1°C/W Rth = 0.5°C/W Rth = 0°C/W Tcase(°C) 85 30 20 10 0 0 α = 120° α = 180° α = 60° α = 30° α = 90° IT(RMS)(A) 5 10 15 180° α α 20 25 30 95 20 105 10 115 Tamb(°C) 0 125 0 20 40 60 80 100 120 140 Figure 3. On-state rms current versus case Figure 4. Relative variation of thermal temperature impedance versus pulse duration IT(RMS)(A) 30 25 α = 180° K=[Zth(j-c)/Rth(j-c)] 1.00 Zth(j-c) 20 0.10 15 Zth(j-a) 10 0.01 5 Tcase(°C) tp(s) 0 0.0 0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Doc ID 18268 Rev 2 3/7 Characteristics TPDVxx25 Figure 5. Relative variation of gate trigger Figure 6. current and holding current versus junction temperature Non repetitive surge peak on-state current versus number of cycles IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.5 2 1.5 IGT 1 IH & IL ITSM(A) 200 150 100 Tj initial=25°C t = 20 ms One cycle 50 0.5 Tj(°C) 0 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1 Number of cycles 10 100 1000 Figure 7. Non-repetitive surge peak on-state Figure 8. current for a sinusoidal pulse and corresponding values of I2t On-state characteristics (maximum values) ITSM(A), I2t (A2s) 1000 ITSM Tj initial = 25°C ITM(A) 1000 100 Tj=max I2t 100 1 tp(ms) 2 5 10 1 10 1 Tj=25°C VTM(V) 2 3 4 Tj max.: Vt0=1.1V Rd=19mΩ 5 6 Figure 9. Safe turn-off operating area (dV/dt)c(V/µs) 1000 100 Tj initial = 25°C 10 (dI/dt)c(A/ms) 1 1 10 100 4/7 Doc ID 18268 Rev 2 .


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