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TPDV840

STMicroelectronics

Triac

TPDVxx40 $ * $ $ $ * 723LQVXODWHG Features • On-state current (IT(RMS)): 40 A • Max. blocking voltage (VDRM/VRRM)...


STMicroelectronics

TPDV840

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TPDVxx40 $ * $ $ $ * 723LQVXODWHG Features On-state current (IT(RMS)): 40 A Max. blocking voltage (VDRM/VRRM): 1200 V Gate current (IGT): 200 mA Commutation at 10 V/µs: up to 142 A/ms Noise immunity: 500 V/µs Insulated package: – 2,500 V rms (UL recognized: E81734) 40 A high voltage Triacs Datasheet - production data Description The TPDVxx40 series use a high performance alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...). Table 1. Device summary Parameter TPDV640RG Blocking voltage VDRM/VRRM 600 V On-state current IT(RMS) Gate current IGT TPDV840RG 800 V 40 A 200 mA TPDV1240RG 1200 V June 2015 This is information on a product in full production. DocID18270 Rev 2 1/8 www.st.com Characteristics 1 Characteristics TPDVxx40 Table 2. Absolute ratings (limiting values) Symbol Parameter Value IT(RMS) ITSM I2t dI/dt VDRM VRRM On-state rms current (180° conduction angle) Tc = 75 °C Non repetitive surge peak on-state current I2t value for fusing tp = 2.5 ms tp = 8.3 ms tp = 10 ms tp = 10 ms Tj = 25 °C Tj = 25 °C Critical rate of rise of on-state current Repetitive F = 50 Hz IG = 500 mA; dlG/dt = 1 A/µs Non repetitive TPDV640 Repetitive peak off-state voltage TPDV840 TPDV1240 Tj = 125 °C 40 590 370 350 610 20 100 600 800 1200 Tstg Storage junction temperature range Tj Operating junction temperat...




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