TMMBAT42

® TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Fordware Current Surge non Repetitive Forward Current Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Tl = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms Tl = 65 °C MINIMELF (Glass) Value 30 200 500 4 200 - 65 to 150 - 65 to 125 260 Unit V mA mA A mW °C °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/W August 1999 Ed: 1A 1/4 TMMBAT 42/TMMBAT 43 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF* Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 100°C Test Conditions IR = 100µA IF = 200mA IF = 10mA IF = 50mA IF = 2mA IF = 15mA VR = 25V BAT 43 0.26 All Types BAT 42 Min. 30 1 0.4 0.65 0.33 0.45 0.5 100 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C trr η Tj = 25°C VR = 1V Tj = 25°C IF = 10mA Test Conditions f = 1MHz IR = 10mA irr = 1mA RL = 100Ω 80 Min. Typ. 7 5 Max. Unit pF ns % Tj = 25°C RL = 15KΩ CL = 300pF f = 45MHz Vi = 2V δ < 2%. * Pulse test: tp ≤ 300µs Figure 1. Forward current versus forward voltage at different temper...