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TLE4935 Dataheets PDF



Part Number TLE4935
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Datasheet TLE4935 DatasheetTLE4935 Datasheet (PDF)

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Bipolar IC Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields Large temperature range Protection against reversed polarity Output protection against electrical disturbances SOT-89 Type w TLE 4905 G w TLE 4935 G w TLE 4935-2 G w TLE 4945-2 G w New type Ordering Code Q62705-K402 Q62705-K404 Q62705-K.

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Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Bipolar IC Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields Large temperature range Protection against reversed polarity Output protection against electrical disturbances SOT-89 Type w TLE 4905 G w TLE 4935 G w TLE 4935-2 G w TLE 4945-2 G w New type Ordering Code Q62705-K402 Q62705-K404 Q62705-K405 Q62705-K403 Package SOT-89 SOT-89 SOT-89 SOT-89 TLE 4905/35/35-2/45-2 (Unipolar/Bipolar Magnetic Field Switches) have been designed specifically for automotive and industrial applications. Reverse polarity protection is included on-chip as is output protection against negative voltage transients. Typical applications are position/proximity indicators, brushless DC motor commutation, rotational indexing etc. Semiconductor Group 1 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Pin Configuration (top view) 2.25 ±0.2 Center of sensitive area 1±0.2 1 2 3 AEP02150 Figure 1 Pin Definitions and Funtions Pin No. 1 2 3 Symbol Function Supply voltage Ground Output VS GND Q Semiconductor Group 2 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Circuit Description The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The internal reference provides the supply voltage for the components. A magnetic field perpendicular to the chip surface induces a voltage at the hall probe. This voltage is amplified and switches a Schmitt-trigger with open-collector output. A protection diode against reverse power supply is integrated. The output is protected against electrical disturbances. Threshold Generator VS 1 HallGenerator 3 Q VS VRef Amplifier SchmittTrigger Output Stage AEB01243 2 GND Figure 2 Block Diagram Semiconductor Group 3 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Functional Description Unipolar Type TLE 4905 (figure 3 and 4) When a positive magnetic field is applied in the indicated direction (figure 3) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When the magnetic field is reduced to a value smaller than the release point, the output of the IC turns off (Release Point; figure 4). + Branded Side Ι S N VQ + VS - AES01231 Figure 3 Sensor/Magnetic-Field Configuration B BOP BRP 0 Induction t VQ VQH Output Voltage VQL t AED01420 Figure 4 Switching Characteristics Unipolar Type 4 1998-04-29 Semiconductor Group TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Functional Description Bipolar Type TLE 4935/35-2/45-2 (figure 5 and 6) When a positive magnetic field is applied in the indicated direction (figure 5) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). The output state does not change unless a reverse magnetic field exceeding the turn-off magnetic induction |BRP| is exceeded. In this case the output will turn off (Release Point; figure 6). + Branded Side Ι S N VQ + VS - AES01231 Figure 5 Sensor/Magnetic-Field Configuration B BOP 0 t BRP Induction VQ VQH Output Voltage VQL t AED01421 Figure 6 Switching Characteristics Bipolar Type 5 1998-04-29 Semiconductor Group TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Absolute Maximum Ratings Tj = – 40 to 125 °C Parameter Supply voltage Supply voltage Output voltage Output current Output reverse current Junction temperature Storage temperature Thermal resistance Symbol Limit Values Unit Remarks min. max. 32 40 32 100 100 125 150 100 V V V mA mA °C °C – – 40 – – – – – 40 – 50 VS VS VQ IQ – IQ Tj Tstg Rth JA t < 400 ms; ν = 0.1 – – – – – K/W – Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating Range Parameter Supply voltage Junction temperature Symbol Limit Values Unit Remarks min. max. 18 125 V °C – – 4.0 – 40 VS Tj Note: In the operating range the functions given in the circuit description are fulfilled. Semiconductor Group 6 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G AC/DC Characteristics 4.0 V ≤ VS ≤ 18 V; – 40 °C ≤ Tj ≤ 125 °C Parameter Supply current Symbol Limit Values min. typ. 2.5 3.5 0.25 – – max. 7 8 0.5 10 1 mA mA V µA µs – – – – – Unit Test Condition Test Circuit 1 1 1 1 1 ISHigh ISLow VQSat IQL tr / tf B < BRP B > BOP IQ = 40 mA IQ = 40 mA VQ = 18 V Output saturation voltage Output leakage current Rise/fall time RL = 1.2 kΩ CL ≤ 33 pF Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage. Note: Moderate chan.


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