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TLP190B Dataheets PDF



Part Number TLP190B
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Photocoupler
Datasheet TLP190B DatasheetTLP190B Datasheet (PDF)

TOSHIBA Photocoupler IRED & Photo−Diode Arry TLP190B Telecommunications Programmable Controllers MOS Gate Drivers MOSFET Gate Drivers TLP190B Unit: mm The TOSHIBA TLP190B mini-flat photocoupler is suitable for surfacemount assembly. The TLP190B consists of an infrared emitting diode optically coupled to a series connected photodiode array which is suitable for MOSFET gate drivers. TLP190 : Mini Flat Package, 4Pin, one circuit. • Open voltage: 7.0V (min) • Short current: 12.0 μA (min) • Isolati.

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TOSHIBA Photocoupler IRED & Photo−Diode Arry TLP190B Telecommunications Programmable Controllers MOS Gate Drivers MOSFET Gate Drivers TLP190B Unit: mm The TOSHIBA TLP190B mini-flat photocoupler is suitable for surfacemount assembly. The TLP190B consists of an infrared emitting diode optically coupled to a series connected photodiode array which is suitable for MOSFET gate drivers. TLP190 : Mini Flat Package, 4Pin, one circuit. • Open voltage: 7.0V (min) • Short current: 12.0 μA (min) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 TOSHIBA 11−4C1 Weight: 0.09 g (typ.) Short Current Type Name Classification Short Current (min) IF Marking of Classification TLP190B C20 Standard 20 μA 10 mA 12 μA 20 20, blank Note: Application type name for certification test, please use standard product type name, i.e. TLP190B(C20) : TLP190B Pin Configuration (top view) 1 6 3 4 1. Anode 3. Cathode 4. Cathode 6. Anode © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1990-11 2019-06-17 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Forward current Forward current derating (Ta ≥ 25°C) Pulse forward current (100μs pulse 100pps) LED Reverse voltage Diode power dissipation Diode power dissipation derating (Ta >25°C) Junction temperature Forward current Reverse voltage Detector Output power dissipation Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 60 s, R.H. ≤ 60 %) Note 1 IF ΔIF /°C 50 −0.5 mA mA / °C IFP 1 VR 3 PD 100 △PD /°C -1.0 A V mW mW/°C Tj 125 °C IFD 50 μA VRD 10 V PO 0.5 mW Tj 125 °C Tstg −55 to 125 °C Topr −40 to 85 °C Tsol 260 °C BVS 2500 Vrms TLP190B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristics Forward current Operating temperature Symbol IF Topr Min Typ. Max Unit ― 20 25 mA −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please .


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