TLP351

TOSHIBA Photocoupler IRED + Photo IC TLP351 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter TLP351 Unit: mm The TOSHIBA TLP351 consists of an infrared emitting diode and an integrated photodetector. This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs. Peak output current: ±0.6 A (max) Guaranteed performance over temperature: −40 to 100°C Supply current: 2 mA (max) Power supply voltage: 10 to 30 V Threshold input current : IF = 5 mA (max) Switching time (tpLH/tpHL) : 700 ns (max) Common mode transient immunity: ±10 kV/μs Isolation voltage: 3750 Vrms UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) TOSHIBA 11-10C4S Weight: 0.54 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(D4). Truth Table Input H L LED ON OFF Tr1 ON OFF Tr2 OFF ON Output H L Schematic IF 2+ VF 3− (Tr1) ICC VCC 8 IO (Tr2) VO 6 GND 5 A 0.1 μF bypass capacitor must be connected between pin 8 and 5. © 2019 1 Toshiba Electronic Devices & Storage Corporation Pin Configuration (top view) 1 8 1: N.C. 2: Anode 2 7 3: Cathode 4: N.C. 5: GND 3 6 6: VO (output) 7: N.C. 4 5 8: VCC Start of commercial production 2002-05 2019-06-24 Absolute Maximum Ratings (Ta = 25°C) TLP351 Character...