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Photocoupler. TLP523 Datasheet

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Photocoupler. TLP523 Datasheet






TLP523 Photocoupler. Datasheet pdf. Equivalent




TLP523 Photocoupler. Datasheet pdf. Equivalent





Part

TLP523

Description

Photocoupler



Feature


TLP523,TLP523-2,TLP523-4 TOSHIBA Photoco upler IRED & Photo-Transistor TLP523, T LP523-2, TLP523-4 Programmable Control lers DC-Output Module Solid State Relay Unit: mm The TOSHIBA TLP523, -2 and -4 consist of an infrared emitting diod e coupled with a silicon, Darlington co nnected, phototransistor which has an i ntegral base-emitter resistor to optimi ze switching speed.
Manufacture

Toshiba Semiconductor

Datasheet
Download TLP523 Datasheet


Toshiba Semiconductor TLP523

TLP523; and elevated temperature characteristic s. The TLP523-2 offers two isolated cha nnels in an eight lead plastic DIP pack age, while the TLP523-4 provides four i solated channels per package. • Curre nt transfer ratio: 500 % (min) (IF = 1 mA) • Isolation voltage: 2500 Vrms (m in) • Collector-emitter voltage: 55 V (min) • Leakage current: 10 μA (max ) (Ta = 85°C) • UL-recogniz.


Toshiba Semiconductor TLP523

ed: UL 1577, File No.E67349 • cUL-reco gnized :CSA Component Acceptance Servic e No.5A File No.E67349 TOSHIBA 11-5B2 Weight: 0.26 g (typ.) TOSHIBA 11-10 C4 Weight: 0.54 g (typ.) © 2019 1 Toshiba Electronic Devices & Storage Co rporation TOSHIBA 11-20A3 Weight: 1. 1 g (typ.) Start of commercial product ion 1984-08 2019-06-24 Pin Configurati ons (top view) TLP52.


Toshiba Semiconductor TLP523

3 1 2 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector TLP523-2 41 32 3 4 1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6 , 8 : Collector 81 TLP523-4 72 63 54 5 6 7 8 TLP523,TLP523-2,TLP523-4 16 15 14 13 12 11 10 9 1, 3, 5, 7 : A node 2, 4, 6, 8 : Cathode 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector © 2019 2 Toshiba Electronic Devices & Storage Corporati.

Part

TLP523

Description

Photocoupler



Feature


TLP523,TLP523-2,TLP523-4 TOSHIBA Photoco upler IRED & Photo-Transistor TLP523, T LP523-2, TLP523-4 Programmable Control lers DC-Output Module Solid State Relay Unit: mm The TOSHIBA TLP523, -2 and -4 consist of an infrared emitting diod e coupled with a silicon, Darlington co nnected, phototransistor which has an i ntegral base-emitter resistor to optimi ze switching speed.
Manufacture

Toshiba Semiconductor

Datasheet
Download TLP523 Datasheet




 TLP523
TLP523,TLP523-2,TLP523-4
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP523, TLP523-2, TLP523-4
Programmable Controllers
DC-Output Module
Solid State Relay
Unit: mm
The TOSHIBA TLP523, -2 and -4 consist of an infrared emitting diode
coupled with a silicon, Darlington connected, phototransistor which has an
integral base-emitter resistor to optimize switching speed and elevated
temperature characteristics.
The TLP523-2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523-4 provides four isolated channels per package.
Current transfer ratio: 500 % (min) (IF = 1 mA)
Isolation voltage: 2500 Vrms (min)
Collector-emitter voltage: 55 V (min)
Leakage current: 10 μA (max) (Ta = 85°C)
UL-recognized: UL 1577, File No.E67349
cUL-recognized :CSA Component Acceptance Service No.5A
File No.E67349
TOSHIBA
11-5B2
Weight: 0.26 g (typ.)
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
© 2019
1
Toshiba Electronic Devices & Storage Corporation
TOSHIBA
11-20A3
Weight: 1.1 g (typ.)
Start of commercial production
1984-08
2019-06-24




 TLP523
Pin Configurations (top view)
TLP523
1
2
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TLP523-2
41
32
3
4
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
81
TLP523-4
72
63
54
5
6
7
8
TLP523,TLP523-2,TLP523-4
16
15
14
13
12
11
10
9
1, 3, 5, 7 : Anode
2, 4, 6, 8 : Cathode
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24




 TLP523
Absolute Maximum Ratings (Ta = 25°C)
TLP523,TLP523-2,TLP523-4
Characteristics
Forward current
Forward current derating
Pulse forward current
(100 μs pulse, 100 pps)
Diode power dissipation
Diode power dissipation derating
Reverse voltage
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation derating
(1 circuit) (Ta 25°C))
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Total power dissipation (1 circuit)
Total power dissipation derating
(Ta 25°C) (1 circuit)
Isolation voltage
(AC, 60 s, R.H.60 %)
(Note 1)
Symbol
IF
ΔIF/°C
IFP
PD
ΔPD/°C
VR
VCEO
VECO
IC
PC
ΔPC/°C
Topr
Tstg
Tsol
PT
ΔPT/°C
BVS
Rating
TLP523
TLP523-2
TLP523-4
60
50
-0.7 (Ta 39°C) -0.5 (Ta 25°C)
Unit
mA
mA/°C
1
A
70
60
-0.8 (Ta 39°C) -0.6 (Ta 25°C)
5
55
0.3
150
mW
mW/°C
V
V
V
mA
150
100
mW
-1.5
-1.0
-55 to 100
-55 to 125
260
250
150
-2.5
-1.5
mW/°C
°C
°C
°C
mW
mW/°C
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
Collector current
Operating temperature range
VCC
5
24
V
IF
16
20
mA
Ic
40
mA
Topr
-25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-24



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