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Photocoupler. TLP525G Datasheet

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Photocoupler. TLP525G Datasheet






TLP525G Photocoupler. Datasheet pdf. Equivalent




TLP525G Photocoupler. Datasheet pdf. Equivalent





Part

TLP525G

Description

Photocoupler



Feature


TLP525G,TLP525G−2,TLP525G−4 TOSHIBA Photocoupler IRED & Photo−Triac TLP52 5G, TLP525G−2, TLP525G−4 Triac Dri ve Programmable Controllers AC−Output Module Solid State Relay Unit: mm Th e TOSHIBA TLP525G, −2 and −4 consis t of a photo−triac optically coupled to an infrared emitting diode. The TLP5 25G−2 offers two isolated channels in an eight lead plastic DIP package, wh.
Manufacture

Toshiba Semiconductor

Datasheet
Download TLP525G Datasheet


Toshiba Semiconductor TLP525G

TLP525G; ile the TLP525G−4 provides four isolat ed channels in a sixteen lead plastic D IP package. • Peak off−stage voltag e: 400 V (min) • Trigger LED current: 10 mA (max) • Peak on−stage curren t: 2 Apk (max) • Isolation voltage: 2 500 Vrms (min) • UL-recognized: UL 15 77, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 TOSHIBA 11−5B2 Wei.


Toshiba Semiconductor TLP525G

ght: 0.26g (typ.) Pin Configurations (t op view) TOSHIBA 11−10C4 Weight: 0 .54g (typ.) © 2019 1 Toshiba Electr onic Devices & Storage Corporation TOS HIBA 11−20A3 Weight: 1.1g (typ.) S tart of commercial production 1985-01 2 019-06-24 Absolute Maximum Ratings (Ta = 25°C) TLP525G,TLP525G−2,TLP525G 4 Characteristics Symbol Forward c urrent Forward current dera.


Toshiba Semiconductor TLP525G

ting Pulse forward current LE D Rever se voltage Input power dissipation In put power dissipation derating Junctio n temperature Off−state output termi nal voltage On−state RMS current Ta = 25°C Ta = 70°C On−state current derating (Ta ≥ 25°C) Detector Pea k on state current Peak non-repetitive surge current (PW = 10ms) Output power dissipation Output power di.

Part

TLP525G

Description

Photocoupler



Feature


TLP525G,TLP525G−2,TLP525G−4 TOSHIBA Photocoupler IRED & Photo−Triac TLP52 5G, TLP525G−2, TLP525G−4 Triac Dri ve Programmable Controllers AC−Output Module Solid State Relay Unit: mm Th e TOSHIBA TLP525G, −2 and −4 consis t of a photo−triac optically coupled to an infrared emitting diode. The TLP5 25G−2 offers two isolated channels in an eight lead plastic DIP package, wh.
Manufacture

Toshiba Semiconductor

Datasheet
Download TLP525G Datasheet




 TLP525G
TLP525G,TLP525G2,TLP525G4
TOSHIBA Photocoupler IRED & PhotoTriac
TLP525G, TLP525G2, TLP525G4
Triac Drive
Programmable Controllers
ACOutput Module
Solid State Relay
Unit: mm
The TOSHIBA TLP525G, 2 and 4 consist of a phototriac optically
coupled to an infrared emitting diode.
The TLP525G2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP525G4 provides four isolated channels in a
sixteen lead plastic DIP package.
Peak offstage voltage: 400 V (min)
Trigger LED current: 10 mA (max)
Peak onstage current: 2 Apk (max)
Isolation voltage: 2500 Vrms (min)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
TOSHIBA
115B2
Weight: 0.26g (typ.)
Pin Configurations (top view)
TOSHIBA
1110C4
Weight: 0.54g (typ.)
© 2019
1
Toshiba Electronic Devices & Storage Corporation
TOSHIBA
1120A3
Weight: 1.1g (typ.)
Start of commercial production
1985-01
2019-06-24




 TLP525G
Absolute Maximum Ratings (Ta = 25°C)
TLP525G,TLP525G2,TLP525G4
Characteristics
Symbol
Forward current
Forward current derating
Pulse forward current
Reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Offstate output terminal voltage
Onstate RMS current
Ta = 25°C
Ta = 70°C
Onstate current derating
(Ta 25°C)
Peak on state current
Peak non-repetitive surge current
(PW = 10ms)
Output power dissipation
Output power dissipation derating
(Ta 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Isolation voltage
(Note)
IF
IF / °C
IFP
VR
PD
PD /°C
Tj
VDRM
IT (RMS)
IT / °C
ITP
ITSM
Po
ΔPO / °C
Tj
Tstg
Topr
Tsol
BVS
TLP525G
50
Rating
TLP525G2
TLP525G4
50
0.7 (Ta 53°C)
0.5 (Ta 25°C)
1 (100μs pulse, 100pps)
5
50
60
-0.69(Ta 53°C)
-0.6(Ta 25°C)
125
400
100
80
50
40
1.1
0.9
2 (100μs pulse, 120pps)
1.2
300
240
3.0
-2.4
115
55 to 125
40 to 100
260 (10 s)
2500 (AC, 60 s, R.H. 60 %)
Unit
mA
mA / °C
A
V
mW
mW/°C
°C
V
mA
mA / °C
A
A
mW
mW / °C
°C
°C
°C
°C
V rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
Peak onstate current
Operating temperature
VAC
120
Vac
IF
15
20
25
mA
ITP
1
A
Topr
25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24




 TLP525G
TLP525G,TLP525G2,TLP525G4
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak offstate current
Peak onstate voltage
Holding current
Critical rate of rise
of offstate voltage
Critical rate of rise
of commutating voltage
Symbol
Test Condition
Min Typ. Max Unit
VF IF = 10 mA
1.0 1.15 1.3
V
IR
VR = 5 V
10
μA
CT
IDRM
VF = 0 V, f = 1 MHz
VDRM = 400 V
30
pF
10 100 nA
VTM ITM = 100 mA
1.7 3.0
V
IH
0.6
mA
dv / dt
Vin = 120 Vrms, Ta = 85 °C
(Figure 1)
200
500
V / μs
dv / dt (c)
Vin = 30 Vrms, IT = 15 mA
(Figure 1)
0.2
V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Capacitance input to output
Isolation resistance
Isolation voltage
Fig.1 dv / dt Test Circuit
Symbol
IFT
CS
RS
BVS
Test Condition
VT = 3 V
VS = 0 V, f = 1 MHz
VS = 500 V, R.H. 60 %
AC, 60 s
Min. Typ. Max. Unit
5
10
mA
0.8
pF
5×1010 1014
Ω
2500
Vrms
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-24



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