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TLP560G Dataheets PDF



Part Number TLP560G
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Photocoupler
Datasheet TLP560G DatasheetTLP560G Datasheet (PDF)

TOSHIBA Photocoupler IRED & Photo-Triac TLP560G Triac Driver Programmable Controllers AC-Output Module Solid State Relay TLP560G Unit: mm The TOSHIBA TLP560G consists of a photo-triac optically coupled to an infrared emitting diode in a six lead plastic DIP package. • Peak off-state voltage: 400 V (min) • On-state current: 100 mA (max) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • VDE-appr.

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TOSHIBA Photocoupler IRED & Photo-Triac TLP560G Triac Driver Programmable Controllers AC-Output Module Solid State Relay TLP560G Unit: mm The TOSHIBA TLP560G consists of a photo-triac optically coupled to an infrared emitting diode in a six lead plastic DIP package. • Peak off-state voltage: 400 V (min) • On-state current: 100 mA (max) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(D4). TOSHIBA 11-7A9S Weight: 0.39g (typ.) Classification (Note 2) (IFT5) (IFT7) Standard Trigger LED Current (mA) VT = 3V, Ta = 25°C Min Max ― 5 ― 7 ― 10 Marking of Classification T5 T5, T7 T5, T7, blank Note 2: Ex. (IFT5); TLP560G(IFT5) Note: Application type name for certification test, please use standard product type name, i.e. TLP560G(IFT5): TLP560G Note: According to VDE0110, table 4. Pin Configuration (top view) 1 6 2 3 4 1 : Anode 2 : Cathode 3 : N.C. 4 : Triac Terminal 6 : Triac Terminal © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-12 2019-06-24 Absolute Maximum Ratings (Ta = 25°C) TLP560G Characteristic Symbol Rating Unit LE D Forward current Forward current derating (Ta ≥ 53°C) Peak forward current (100μs pulse, 100pps) Reverse voltage Diode power dissipation Diode power dissipation derating (Ta ≥ 53°C) Junction temperature Off−state output terminal voltage On-state RMS current Ta = 25°C Ta = 70°C On-state current derating (Ta ≥ 25°C) Peak on−state current (100μs pulse, 120pps) Peak nonrepetitive surge current (Pw = 10ms) IF ΔIF / °C IFP VR PD ΔPD /°C Tj VDRM IT(RMS) ΔIT / °C ITP ITSM 50 mA -0.7 mA / °C 1 A 5 V 100 mW -1.4 mW/°C 125 °C 400 V 100 mA 50 -1.1 mA / °C 2 A 1.2 A Detector Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 60 s, R.H. ≤ 60 %) PO ΔPO / °C Tj Tstg Topr Tsol BVS 300 -3.0 115 -55 to 125 -40 to 100 260 2500 mW mW / °C °C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage Forward current Peak on−state current Operating temperature VAC ― ― 120 Vac IF 15 20 25 mA ITP ― ― 1 A Topr -25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 2 Toshiba Electronic Devices & Storage Corporation 2019-06-24 Electrical Characteristics (Ta = 25°C) TLP560G LE D Characteristic Forward voltage Reverse current Capacitance Peak off-state current Peak on−state voltage Holding current Critical rate of rise of off−state voltage Critical rate of rise of commutating voltage Symbol VF IR CT IDRM VTM IH dv / dt dv / dt(c) Test Condition Min IF = 10 mA 1.0 VR = 5 V ― V = 0 V, f = 1 MHz ― VDRM = 400 V ― ITM = 100 mA ― ― ― Vin = 120 Vrms, Ta = 85 °C (Fig.1) 200 Vin = 30 Vrms, IT = 15 mA (Fig.1) ― Typ. 1.15 ― 30 10 1.7 0.6 500 0.2 Max Unit 1.3 V 10 μA ― pF 100 nA 3.0 V ― mA ― V / μs ― V / μs Detector Coupled Electrical Characteristics (Ta = 25°C) Characteristic Trigger LED current Capacitance (input to output) Isolation resistance Isolation voltage Fig.1: dv / dt test circuit Symbol IFT CS RS BVS Test Condition VT = 3 V VS = 0 V, f = 1 MHz VS = 500 V, R.H. ≤ 60 % AC, 60 s Min Typ. ― ― 5×1010 2500 5 0.8 1014 ― Max Unit 10 mA ― pF ― Ω ― Vrms + Rin Vin VCC 120Ω – 1 6 2 3 4 2kΩ dv / dt(c) 5V, VCC 0V dv / dt © 2019 3 Toshiba Electronic Devices & Storage Corporation 2019-06-24 Allowable forward current IF (mA) Allowable pulse forward current IFP (mA) IF – Ta 60 50 40 30 20 10 0 -20 3000 1000 500 300 0 20 40 60 80 100 120 Ambient temperature Ta (°C) IFP – DR PULSE WIDTH ≤ 100μs Ta = 25°C 100 50 30 10 10–3 -.


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