Document
TOSHIBA Photocoupler IRED & Photo-Triac
TLP560G
Triac Driver Programmable Controllers AC-Output Module Solid State Relay
TLP560G
Unit: mm
The TOSHIBA TLP560G consists of a photo-triac optically coupled to an infrared emitting diode in a six lead plastic DIP package.
• Peak off-state voltage: 400 V (min) • On-state current: 100 mA (max) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1)
Note 1: When a VDE approved type is needed,
please designate the Option(D4).
TOSHIBA
11-7A9S
Weight: 0.39g (typ.)
Classification (Note 2)
(IFT5) (IFT7) Standard
Trigger LED Current (mA)
VT = 3V, Ta = 25°C
Min
Max
―
5
―
7
―
10
Marking of Classification
T5 T5, T7 T5, T7, blank
Note 2: Ex. (IFT5); TLP560G(IFT5) Note: Application type name for certification test, please
use standard product type name, i.e. TLP560G(IFT5): TLP560G
Note: According to VDE0110, table 4.
Pin Configuration (top view)
1
6
2
3
4
1 : Anode 2 : Cathode 3 : N.C. 4 : Triac Terminal 6 : Triac Terminal
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1982-12
2019-06-24
Absolute Maximum Ratings (Ta = 25°C)
TLP560G
Characteristic
Symbol
Rating
Unit
LE D
Forward current
Forward current derating (Ta ≥ 53°C)
Peak forward current (100μs pulse, 100pps)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta ≥ 53°C)
Junction temperature
Off−state output terminal voltage
On-state RMS current
Ta = 25°C Ta = 70°C
On-state current derating (Ta ≥ 25°C)
Peak on−state current (100μs pulse, 120pps)
Peak nonrepetitive surge current (Pw = 10ms)
IF ΔIF / °C
IFP VR PD ΔPD /°C Tj VDRM
IT(RMS)
ΔIT / °C ITP
ITSM
50
mA
-0.7
mA / °C
1
A
5
V
100
mW
-1.4
mW/°C
125
°C
400
V
100 mA
50
-1.1
mA / °C
2
A
1.2
A
Detector
Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 60 s, R.H. ≤ 60 %)
PO ΔPO / °C
Tj Tstg Topr Tsol BVS
300 -3.0 115 -55 to 125 -40 to 100 260 2500
mW mW / °C
°C °C °C °C Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage Forward current Peak on−state current Operating temperature
VAC
―
―
120 Vac
IF
15
20
25 mA
ITP
―
―
1
A
Topr
-25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24
Electrical Characteristics (Ta = 25°C)
TLP560G
LE D
Characteristic
Forward voltage Reverse current Capacitance Peak off-state current Peak on−state voltage Holding current Critical rate of rise of off−state voltage Critical rate of rise of commutating voltage
Symbol
VF IR CT IDRM VTM IH dv / dt
dv / dt(c)
Test Condition
Min
IF = 10 mA
1.0
VR = 5 V
―
V = 0 V, f = 1 MHz
―
VDRM = 400 V
―
ITM = 100 mA
―
―
―
Vin = 120 Vrms, Ta = 85 °C (Fig.1)
200
Vin = 30 Vrms, IT = 15 mA (Fig.1)
―
Typ. 1.15 ― 30 10 1.7 0.6 500
0.2
Max Unit
1.3
V
10
μA
―
pF
100 nA
3.0
V
―
mA
― V / μs
― V / μs
Detector
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Trigger LED current Capacitance (input to output) Isolation resistance Isolation voltage
Fig.1: dv / dt test circuit
Symbol
IFT CS RS BVS
Test Condition
VT = 3 V VS = 0 V, f = 1 MHz VS = 500 V, R.H. ≤ 60 % AC, 60 s
Min Typ.
― ― 5×1010 2500
5 0.8 1014 ―
Max Unit
10
mA
―
pF
―
Ω
― Vrms
+ Rin
Vin
VCC
120Ω
–
1
6
2
3
4
2kΩ
dv / dt(c)
5V, VCC 0V
dv / dt
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-24
Allowable forward current IF (mA)
Allowable pulse forward current IFP (mA)
IF – Ta
60
50
40
30
20
10
0 -20
3000
1000 500 300
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
IFP – DR PULSE WIDTH ≤ 100μs
Ta = 25°C
100
50 30
10 10–3
-.