TLP722

TLP722 TENTATIVE TOSHIBA Photocoupler Photo−Diode TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4). TLP722: Single circuit · · · · · · · Cathode−anode voltage: 30V (max) Current transfer ratio: 0.1% (min) Input / output isolation voltage: 4000Vrms (min) Operating temperature range: −55~100°C Storage temperature range: −55~125°C UL recognized: UL1577, E67349 VDE approved: VDE0884 Maximum operating insulation voltage: 890VPK Maximum permissible over voltage: 8000VPK (Note): When a VDE0884 approved type is needed, please designate the “ Option (D4) ” · · SEMKO approved product: SS EN60950, approved No. 9808324 / 01 Construction mechanical rating TOSHIBA Weight: 0.28 g 11−5B2 Pin Configuration TLP722 type Creepage distance Clearance Insulation thickness 7.0 mm 7.0 mm 0.4 mm TLP722F type 8.0 mm 8.0 mm 0.4 mm (top view) 1 2002-09-25 TLP722 Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating LED Pulse forward current Pulse forward current Reverse voltage Cathode-anode voltage Detector Anode-cathode voltage Photodiode output current Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage Symbol IF ∆IF / °C IFP IFTP VR VKAO VAKO IPB Tj Tstg Topr Tsol BVS Rating 25 -0.45 (Ta ≥ 70°C) 1 (1µs pulse, 1000 pps) 1 (100µs pulse, 1000 pps) 5 30 0.5 100 125 -55~125 -55~100...