TLP733,TLP734
TOSHIBA Photocoupler GaAs Ired&Photo−Transistor
TLP733, TLP734
Office Machine Household Use Equipment Sol...
TLP733,TLP734
TOSHIBA Photocoupler GaAs Ired&Photo−
Transistor
TLP733, TLP734
Office Machine Household Use Equipment Solid State Relay Switching Power Supply
The TOSHIBA TLP733 and TLP734 consist of a photo−
transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. · · · · Collector−emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) UL recognized: UL1577, file no. E67349 BSI approved: BS EN60065: 1994 Certificate no. 7364 BS EN60950: 1992 Certificate no. 7365 · · · SEMKO approved: SS4330784 Certificate no. 9325163, 9522142 Isolation voltage: 4000 Vrms (min.) Option (D4) type VDE approved: DIN VDE0884 / 06.92, Certificate no. 74286, 91808 Maximum operating insulation voltage: 630, 890 VPK Highest permissible over voltage: 6000, 8000 VPK (Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”
1
Unit in mm
TOSHIBA Weight: 0.42 g
11−7A8
Pin Configurations (top view)
TLP733 6 5 4 1 2 3 TLP734 6 5 4
·
Creepage distance Clearance Insulation thickness
7.62 mm pich standard type : 7.0 mm (min.) : 7.0 mm (min.) : 0.5 mm (min.)
10.16 mm pich TLP×××F type 8.0 mm (min.) 8.0 mm (min.) 4.0 mm (min.) 0.5 mm (min.)
2 3
Internal creepage path : 4.0 mm (min.)
1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base
1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc
1
2002-09-25
TLP733,TLP734
Current Transfer ...