TLP733F

TLP733F,TLP734F TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP733F,TLP734F Office Machine Switching Power Supply The TOSHIBA TLP733F and TLP734F consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. All parameters are tested to the specification of TLP733 and TLP734. (both condition and limits) · · · · Collector−emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) UL recognized: UL1577, file no. E67349 BSI approved: BS EN60065: 1994 Certificate no. 7364 BS EN60950: 1992 Certificate no. 7365 · · · SEMKO approved: SS4330784 Certificate no. 9325163, 9522142 Isolation voltage: 4000 Vrms (min.) Option (D4) type VDE approved: DIN VDE0884 / 06.92, Certificate no. 74286, 91808 Maximum operating insulation voltage: 890, 1130 VPK Highest permissible over voltage: 6000, 8000 VPK TOSHIBA Weight: 0.42 g 11−7A802 Unit in mm Pin Configurations (top view) (Note) When a VDE0884 approved type is needed, please designate the “ Option (D4) ” · Creepage distance: 8.0mm (min.) Clearance: 8.0mm (min.) Internal creepage path: 4.0mm (min.) Insulation thickness: 0.5mm (min.) · Conforming safety standards: DIN 57 804. VDE0804 / 1.83 DIN IEC65 / VDE0860 / 8.81 DIN IEC380 / VDE0806 / 8.81 DIN IEC435 / VDE0805 / draft nov. 84 DIN IEC601T1 / VDE0750T1 / 5.82 BS7002: 1989 (EN60950) 1 2002-09-25 TLP733F,TLP734F RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve th...