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TLP759IGM

Toshiba Semiconductor

Photocoupler

TOSHIBA Photocoupler IRED + Photo IC TLP759(IGM) Transistor Inverters Air Conditioners Line Receiver Intelligent Power M...


Toshiba Semiconductor

TLP759IGM

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Description
TOSHIBA Photocoupler IRED + Photo IC TLP759(IGM) Transistor Inverters Air Conditioners Line Receiver Intelligent Power Modules (IPMs) Interfaces TLP759(IGM) Unit: mm The TOSHIBA TLP759(IGM) consists of a high−output infrared emitting diode optically coupled to a high-speed photodiode with a transistor amplifier and is housed in an 8−pin DIP. The TLP759(IGM) has no internal base connection. The Faraday shield in the photodetector chip provides an effective common-mode noise transient immunity. The TLP759(IGM) guarantees minimum and maximum propagation delay, relative time difference between the rise and fall time, and common-mode transient immunity. Therefore, the TLP759(IGM) is suitable for an isolation interface between an intelligent power module (IPM) and a control IC in motor control applications.  Isolation voltage: 5000Vrms (min)  Common-mode transient immunity: ±10 kV / μs (min) @VCM = 1500 Vp−p  Switching Time: tpHL, tpLH = 0.1 μs (min), = 0.8 μs (max) @IF = 10 mA, VCC = 15 V, RL = 20 kΩ, Ta = 25°C  Switching time dispersion: 0.7 μs (max) (|tpLH-tpHL|)  TTL compatible  UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349  VDE-approved: EN 60747-5-5 (Note 1) TOSHIBA 11−10C4S Weight: 0.54 g (typ.) Pin Configuration (top view) 1 2 3 4 SHIELD 8 1: NC 2: Anode 3: Cathode 7 4: NC 5: Emitter (GND) 6 6: Collector (Output) 7: NC 5 8: VCC Note 1 : When a VDE-approved type is needed, please designate the ...




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