Document
TK610xx
ADVANCED INFORMATION FEATURES
s s s s s Very Low Quiescent Current ( 1 µA) No External Components Built In Hysteresis (5% typ.) ±2 % Voltage Detection Accuracy Miniature Package (SOT23-5)
VOLTAGE DETECTOR APPLICATIONS
s s s s s Battery Powered Systems Wireless Telephones Pagers Personal Communications Equipment Personal Digital Assistants
DESCRIPTION
The TK610xx family of voltage detectors is designed to provide accurate monitoring of the battery voltage. These low powered CMOS devices require no external components and are available in 0.1 V steps from 2.0 V to 5.0 V. When the input voltage reaches the detection voltage, the output goes low. This detection voltage has a ±2 % accuracy and is set at the factory. When the input voltage goes high, the output will stay low until the voltage reaches the detection voltage plus hysteresis (+3 to +7 %). The TK610xx is available in a miniature SOT23-5 surface mount package.
01 S
TK610xx
OUT VDD GND
NC
NC
BLOCK DIAGRAM
VDD
ORDERING INFORMATION
TK610
Voltage Code
S
OUT
Tape/Reel Code
Vref
VOLTAGE CODE *
23 = 2.3 V 25 = 2.5 V 27 = 2.7 V 30 = 3.0 V 33 = 3.3 V 36 = 3.6 V 40 = 4.0 V 41 = 4.1 V 42 = 4.2 V 45 = 4.5 V
TAPE/REEL CODE
TL: Tape Left
GND
* Consult factory for availability of other voltages
October 1999 TOKO, Inc.
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TK610xx
ABSOLUTE MAXIMUM RATINGS
All Pins Except GND ................................................ 11 V Power Dissipation (Note 4) ................................ 400 mW Storage Temperature Range ................... -40 to +125 °C Operating Temperature Range ...................-30 to +80 °C Junction Temperature ........................................... 150 °C
TK610xx ELECTRICAL CHARACTERISTICS
TA = 25 °C, unless otherwise specified.
SYMBOL VERR HYS VDDH VDDL ∆VDET VDET * ∆T tDR ISSL ISSM ISSH ION1 ION2 IOP1 IOP1
Note 1: Note 2: Note 3: Note 4:
PARAMETER Voltage Accuracy Hysteresis Maximum Operating Voltage Lowest Operating Voltage Detection Voltage Temperature Coefficient Rise Propagation Delay Time Supply Current (L) Supply Current (M) Supply Current (H) Output Current (N1) (Note 5) Output Current (N2) (Note 5) Output Current (P1) (Note 6) Output Current (P1) (Note 6)
TEST CONDITIONS Note 1 Note 2
MIN -2 3 9
TYP
MAX +2
UNITS % % V
5
7
0.8 -30 ° C ≤ top ≤ 80 ° C Note 3 VDD = 1.0 V VDD = 5.0 V, 2.0 V ≤ Setting Voltage ≤ 5.0 V VDD = 7.0 V, 4.2 V ≤ Setting Voltage ≤ 5.0 V VDS = 0.05 V, VDD = 0.8 V VDS = 0.5 V, VDD = 1.5 V VDS = 2.1 V, VDD = 4.5 V, 2.0 V ≤ Setting Voltage ≤ 4.1 V VDS = 2.1 V, VDD = 7.0 V, 4.2 V ≤ Setting Voltage ≤ 5.0 V 0.01 2.0 2.0 6.0 1.0 1.5 0.05 4.0 4.0 8.0 ±100 100 1.0 2.0 3.0
V ppm/° C µsec µA µA µA mA mA mA mA
VERR = 100 * (VDET - Setting Voltage) / Setting Voltage expressed in % HYS = 100 * (VHYS - VDET) / VDET expressed in % The applied voltage is a pulse of VLOW = 0.8 V, VHIGH = VDET + 2 V Power dissipation is 400 mW when mounted as recommended. Derate at 3.2 mW/°C for operation above 25 °C. Power dissipation is 200 mW in Free Air. Derate at 1.6 mW/°C for operation above 25 °C. Note 5: Output sink current. Note 6: Output source current.
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October 1999 TOKO, Inc.
TK610xx
TEST CIRCUIT
OUT
VDD
GND
OUT
VDD
GND
VDD
VDD
FIGURE 1: TEST CIRCUIT FOR VDET, VHYS, VDDH, VDDL, tDR
FIGURE 3: TEST CIRCUIT FOR ISS
OUT O
VV DD
GND G
OUT O
VV DD
GND G
VDS
VDS VDD
VDD
FIGURE 2: TEST CIRCUIT FOR IOP
FIGURE 4: TEST CIRCUIT FOR ION
October 1999 TOKO, Inc.
Page 3
TK610xx
TYPICAL PERFORMANCE CHARACTERISTICS
VS.
SUPPLY CURRENT OPERATING VOLTAGE 8.0
V DET = 4.2 V
OUTPUT VOLTAGE VS. MAXIMUM OPERATING VOLTAGE 7.0 6.0
VOUT (V)
VDET = 4.2 V
2.0
1.5
IDD (µA)
5.0 4.0 3.0 2.0 1.0
1.0
0.5
0.0 0.0
1.0
2.0 3.0 4.0 VDD (V)
5.0 6.0
7.0
0.0 0.0
1.0
2.0 3.0 4.0 VDD (V)
5.0 6.0
7.0
OUTPUT SINK CURRRENT VS. OUTPUT VOLTAGE 20.0
V DD = 2.5 V
OUTPUT SOURCE CURRRENT VS. OPERATING VOLTAGE 12.0 10.0
V V DS DS DS = 2.5 V = 2.0 V = 1.5 V
15.0
IOUT N (mA)
V DD = 2.0 V
IOUT P (mA)
8.0 6.0 4.0
V
10.0
V = 1.5 V
V
DS
= 1.0 V
5.0
V
DD
V
2.0
DS
= 0.5 V
0.0 0.0
DD
= 1.0V
1.0 VDS (V)
2.0
3.0
0.0 4.0
6.0 VDD (V)
8.0
10.0
4.4 4.35 VDET VHYS (V) 4.3 4.25 4.2
DETECTION VOLTAGE AND HYSTERESIS VS. TEMPERATURE
1
PROPAGATION DELAY TIME VS. OUTPUT CAPACITANCE
V
HYS
td (ms)
tdf
0.1
tdr V DET
4.15 -50
0 VDD (V)
50
100
0.01 0.0001
0.001
0.01
0.1
COUT (µF)
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October 1999 TOKO, Inc.
TK610xx
DEFINITION AND EXPLANATION OF TECHNICAL TERMS
DETECTION VOLTAGE (VDET) When VDD goes below the detection voltage, the output goes low. HYSTERESIS VOLTAGE (VHYS) When VDD goes above the sum of the detection voltage and the hysteresis voltage, the output goes high. SUPPLY CURRENT (ISSL) Supply current (VDD = 1 V) SUPPLY CURRENT (ISSM) Supply current (VDD = 5 V) 2.0 V ≤ setting voltage ≤ 4.1 V SUPPLY CURRENT (ISSH) Supply current (VDD = 7 V) 4.2 ≤ setting voltage ≤ 5.0 V OUTPUT CURRENT (ION1) Output sink current of output N channel FET VDD = 0.8 V, VDS = 0.5 V OUTPUT.