THA15

SD1726 (THA15) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1726 BRANDING THA15 PIN CONNECTION DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 10 233 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.75 °C/W 1/7 SD1726 (THA15) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC Symbol IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 60V VCE = 6V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 1.4A 110 110 55 4.0 — — 18 — — — — — — — — — — — 5 5 43.5 V V V V mA mA — Test Conditions Value Min. Typ. Max. Unit POUT G P* IMD* η c* COB Note: P OUT * f1 f = 30 MHz POUT = 150 WPEP POUT = 150 WPEP POUT = 150 WPEP f = 1 MHz = 30 W PEP, G P VCE = 50 V...