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THDT6511D Dataheets PDF



Part Number THDT6511D
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Datasheet THDT6511D DatasheetTHDT6511D Datasheet (PDF)

THDT6511D Application Specific Discretes A.S.D.™ FEATURES DUALASYMETRICALTRANSIENTSUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min. LOW DYNAMIC CHARACTERISTICS STAND CCITT K20 AND LSSGR SO8 DESCRIPTION This device has been especially designed to protect subscriber line cards against overvoltage. Two diodes clamp positive overloads while negative surges are suppressed by two protection thyristors. A particular attention has beengiven t.

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THDT6511D Application Specific Discretes A.S.D.™ FEATURES DUALASYMETRICALTRANSIENTSUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min. LOW DYNAMIC CHARACTERISTICS STAND CCITT K20 AND LSSGR SO8 DESCRIPTION This device has been especially designed to protect subscriber line cards against overvoltage. Two diodes clamp positive overloads while negative surges are suppressed by two protection thyristors. A particular attention has beengiven to the internal wire bonding. The ”4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700µs 5/310µs 10/700µs 5/310µs 1.2/50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs 2/10µs 2/10µs 10/1000µs 10/1000µs 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) 2.5kV 125A (*) 1kV 40A (*) SCHEMATIC DIAGRAM TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION PRELIMINARY DATASHEET TIP 1 GND 2 GND 3 RING 4 8 TIP 7 GND 6 GND 5 RING (*) with series resistors or PTC. February 1998 - Ed: 2 1/6 THDT6511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol IPP Peak pulse current Parameter (see note 1) 10/1000µs 5/310µs 2/10µs t = 300 ms t=1s t=5s Value 40 50 125 10 3.5 1 1 - 55 to + 150 150 260 % I PP Unit A ITSM Non repetitive surge peak on-state current F = 50 Hz F = 50 Hz, 60 x 1 s, 2 mn between pulse Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s tp=1000µs tp=310µs tp=10µs A ITSM Tstg Tj TL A °C °C Note 1 : Pulse waveform : 10/1000µs tr =10µs 5/310µs tr =5µs 2/10µs tr =2µs 100 50 0 tr tp t THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VBR VBO IH VF VFP IBO IPP C αT Parameter Stand-off voltage Leakagecurrent at stand-offvoltage Breakdown voltage Breakover voltage Holding current Forward voltage drop Peak forward voltage IH VBO VBR VRM IRM VF V I IF Breakover current Peak pulse current Capacitance Temperature coefficient IBO Ipp 2/6 THDT6511D 1 - PARAMETERS RELATED TO DIODE LINE / GND Symbol VF VFP IF = 1 A see curve fig. 1 Test conditions tp = 100 µs NA NA Min. Typ. Max. 2 NA Unit V V NA : Non Available 2 - PARAMETERS RELATED TO PROTECTION THYRISTOR Symbol VBR VBO IRM IBO IBO IH αT C dV/dt VD = 100 mVRMS F = 1KHz 5 VRM = 63 V tp = 100 µs F = 50 Hz RG = 600 Ω 150 15 500 110 IR = 1mA Tests conditions Min. 65 68 85 100 450 500 Typ. Max. Unit V V µA mA mA mA 10-4/°C pF kV / µs Linear ramp up to 67 % of VBR 3/6 THDT6511D DYNAMIC CHARACTERISTICS : VFP and VBO Figure 1 : 60 10 5 2 250 ns 10 us 10 ms t -85 -100 -130 1 us 200 ns Under lightning and power crossing test, the device limits the transient voltage to the values indicated in the figure LS.


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