TIP100

TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP105/106/107 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 @ 10kW R2 @ 0.6kW R2 E Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage : TIP100 : TIP101 : TIP102 Collector-Emitter Voltage : TIP100 : TIP101 : TIP102 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any se...