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TIP125 Dataheets PDF



Part Number TIP125
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description PNP SILICON POWER DARLINGTONS
Datasheet TIP125 DatasheetTIP125 Datasheet (PDF)

TIP125, TIP126, TIP127 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q Designed for Complementary Use with TIP120, TIP121 and TIP122 65 W at 25°C Case Temperature 5 A Continuous Collector Current Minimum hFE of 1000 at 3 V, 3 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP125 Co.

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TIP125, TIP126, TIP127 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q Designed for Complementary Use with TIP120, TIP121 and TIP122 65 W at 25°C Case Temperature 5 A Continuous Collector Current Minimum hFE of 1000 at 3 V, 3 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP125 Collector-base voltage (IE = 0) TIP126 TIP127 TIP125 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP126 TIP127 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -60 -80 -100 -60 -80 -100 -5 -5 -8 -0.1 65 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP125, TIP126, TIP127 PNP SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IC = -30 mA (see Note 5) VCE = -30 V V CE = -40 V V CE = -50 V VCB = -60 V V CB = -80 V V CB = -100 V VEB = VCE = V CE = IB = IB = VCE = IE = -5 V -3 V -3 V -12 mA -20 mA -3 V -5 A IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -0.5 A IC = IC = IC = IC = IB = 0 -3 A -3 A -5 A -3 A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 1000 1000 -2 -4 -2.5 -3.5 V V V TEST CONDITIONS TIP125 IB = 0 TIP126 TIP127 TIP125 TIP126 TIP127 TIP125 TIP126 TIP127 MIN -60 -80 -100 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -2 mA mA mA V TYP MAX UNIT ICEO ICBO IEBO hFE VCE(sat) VBE VEC NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sens.


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