TIP3055 (NPN), TIP2955 (PNP)
Complementary Silicon Power Transistors
Designed for general−purpose switching and amplifi...
TIP3055 (
NPN), TIP2955 (
PNP)
Complementary Silicon Power
Transistors
Designed for general−purpose switching and amplifier applications.
Features
DC Current Gain −
hFE = 20 − 70 @ IC = 4.0 Adc
Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc
Excellent Safe Operating Area These are Pb−Free Devices*
MAXIMUM RATINGS Rating
Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCER VCB VEB IC IB PD
TJ, Tstg
Value
60
70
100
7.0
15
7.0
90 0.72
– 65 to + 150
Unit Vdc Vdc Vdc Vdc Adc Adc W W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.39 °C/W
Thermal Resistance, Junction−to−Ambient RqJA
35.7 °C/W
Stresses exceeding Maximum R...
