Document
TIP32 Series(TIP32/32A/32B/32C)
TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
• Complement to TIP31/31A/31B/31C
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : TIP32 : TIP32A : TIP32B : TIP32C Value - 40 - 60 - 80 - 100 - 40 - 60 - 80 -100 -5 -3 -5 -3 40 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C
VCEO
Collector-Emitter Voltage : TIP32 : TIP32A : TIP32B : TIP32C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature
VEBO IC ICP IB PC PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP32 : TIP32A : TIP32B : TIP32C Collector Cut-off Current : TIP32/32A : TIP32B/32C Collector Cut-off Current : TIP32 : TIP32A : TIP32B : TIP32C IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE = - 40V, VEB = 0 VCE = - 60V, VEB = 0 VCE = - 80V, VEB = 0 VCE = - 100V, VCE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3A, IB = - 375mA VCE = - 4V, IC = - 3A VCE = - 10V, IC = - 500mA 3.0 25 10 - 200 - 200 - 200 - 200 -1 50 - 1.2 - 1.8 V V MHz
Rev. A, February 2000
Test Condition IC = - 30mA, IB = 0
Min. -40 -60 -80 -100
Max.
Units V V V V
ICEO
VCE = - 30V, IB = 0 VCE = - 60V, IB = 0
- 0.3 - 0.3
mA mA µA µA µA µA mA
ICES
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International
TIP32 Series(TIP32/32A/32B/32C)
Typical Characteristics
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
1000
-10000
VCE = -4V
IC /IB = 10
hFE, DC CURRENT GAIN
100
-1000
V BE(sat)
10
-100
V CE(sat)
1 -1 -10 -100 -1000 -10000
-10 -1 -10 -100 -1000 -10000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
-10
50
IC(MAX) (PULSE)
45
IC[A], COLLECTOR CURRENT
IC(MAX) (DC)
PC[W], POWER DISSIPATION
100µ s
40 35 30 25 20 15 10 5 0
s 5m
s 1m
-1
TIP32 V CEO MAX. TIP32A V CEO MAX. TIP32B V CEO MAX. TIP32C V CEO MAX.
-0.1 -10 -100
0
25
50
o
75
100
125
150
175
200
VCE [V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TIP32 Series(TIP32/32A/32B/32C)
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 –0.05
+0.10
2.4.