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TIP32B Dataheets PDF



Part Number TIP32B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet TIP32B DatasheetTIP32B Datasheet (PDF)

TIP32 Series(TIP32/32A/32B/32C) TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : TIP32 : TIP32A : TIP32B : TIP32C Value - 40 - 60 - 80 - 100 - 40 - 60 - 80 -100 -5 -3 -5 -3 40 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C VCEO Collector-Emitter Vol.

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TIP32 Series(TIP32/32A/32B/32C) TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : TIP32 : TIP32A : TIP32B : TIP32C Value - 40 - 60 - 80 - 100 - 40 - 60 - 80 -100 -5 -3 -5 -3 40 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage : TIP32 : TIP32A : TIP32B : TIP32C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP32 : TIP32A : TIP32B : TIP32C Collector Cut-off Current : TIP32/32A : TIP32B/32C Collector Cut-off Current : TIP32 : TIP32A : TIP32B : TIP32C IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE = - 40V, VEB = 0 VCE = - 60V, VEB = 0 VCE = - 80V, VEB = 0 VCE = - 100V, VCE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3A, IB = - 375mA VCE = - 4V, IC = - 3A VCE = - 10V, IC = - 500mA 3.0 25 10 - 200 - 200 - 200 - 200 -1 50 - 1.2 - 1.8 V V MHz Rev. A, February 2000 Test Condition IC = - 30mA, IB = 0 Min. -40 -60 -80 -100 Max. Units V V V V ICEO VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 - 0.3 - 0.3 mA mA µA µA µA µA mA ICES * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International TIP32 Series(TIP32/32A/32B/32C) Typical Characteristics VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 -10000 VCE = -4V IC /IB = 10 hFE, DC CURRENT GAIN 100 -1000 V BE(sat) 10 -100 V CE(sat) 1 -1 -10 -100 -1000 -10000 -10 -1 -10 -100 -1000 -10000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 50 IC(MAX) (PULSE) 45 IC[A], COLLECTOR CURRENT IC(MAX) (DC) PC[W], POWER DISSIPATION 100µ s 40 35 30 25 20 15 10 5 0 s 5m s 1m -1 TIP32 V CEO MAX. TIP32A V CEO MAX. TIP32B V CEO MAX. TIP32C V CEO MAX. -0.1 -10 -100 0 25 50 o 75 100 125 150 175 200 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area Figure 4. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 TIP32 Series(TIP32/32A/32B/32C) Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.4.


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