TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
Complementary Silicon High-Power Transistors
Designed for ge...
TIP35A, TIP35B, TIP35C (
NPN); TIP36A, TIP36B, TIP36C (
PNP)
Complementary Silicon High-Power
Transistors
Designed for general−purpose power amplifier and switching applications.
Features
25 A Collector Current Low Leakage Current −
ICEO = 1.0 mA @ 30 and 60 V
Excellent DC Gain −
hFE = 40 Typ @ 15 A
High Current Gain Bandwidth Product −
⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
TIP35A TIP35B TIP35C Symbol TIP36A TIP36B TIP36C Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current
− Continuous − Peak (Note 1)
VCEO VCB VEB IC
60 60
80 100 Vdc 80 100 Vdc 5.0 Vdc
Adc 25 40
Base Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range
IB PD
TJ, Tstg
5.0 125
−65 to +150
Adc
W W/_C
_C
Unclamped Inductive Load
ESB
THERMAL CHARACTERISTICS
90
mJ
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.0 °C/W
Junction−To−Free−Air Thermal Resistance
RqJA
35.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please ...