Document
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
Complementary Silicon High-Power Transistors
Designed for general−purpose power amplifier and switching applications.
Features
• 25 A Collector Current • Low Leakage Current −
ICEO = 1.0 mA @ 30 and 60 V
• Excellent DC Gain −
hFE = 40 Typ @ 15 A
• High Current Gain Bandwidth Product −
⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
TIP35A TIP35B TIP35C Symbol TIP36A TIP36B TIP36C Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current
− Continuous − Peak (Note 1)
VCEO VCB VEB IC
60 60
80 100 Vdc 80 100 Vdc 5.0 Vdc
Adc 25 40
Base Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range
IB PD
TJ, Tstg
5.0 125
−65 to +150
Adc
W W/_C
_C
Unclamped Inductive Load
ESB
THERMAL CHARACTERISTICS
90
mJ
Characteristic
Symbol
Max
.