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TIP36A Dataheets PDF



Part Number TIP36A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Silicon High-Power Transistors
Datasheet TIP36A DatasheetTIP36A Datasheet (PDF)

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • These are Pb−Free Devices* MAXIMUM RATINGS Rating TIP35A TIP35B TIP35C Symbol TIP36A TIP36B TIP36C Unit Co.

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TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • These are Pb−Free Devices* MAXIMUM RATINGS Rating TIP35A TIP35B TIP35C Symbol TIP36A TIP36B TIP36C Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous − Peak (Note 1) VCEO VCB VEB IC 60 60 80 100 Vdc 80 100 Vdc 5.0 Vdc Adc 25 40 Base Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range IB PD TJ, Tstg 5.0 125 −65 to +150 Adc W W/_C _C Unclamped Inductive Load ESB THERMAL CHARACTERISTICS 90 mJ Characteristic Symbol Max .


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