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TIP41B Dataheets PDF



Part Number TIP41B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet TIP41B DatasheetTIP41B Datasheet (PDF)

TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor November 2014 TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor Features • Medium Power Linear Switching Applications • Complement to TIP42 Series 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number TIP41A TIP41B TIP41C TIP41CTU Top Mark TIP41A TIP41B TIP41C TIP41C Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Bulk Bulk R.

  TIP41B   TIP41B



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TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor November 2014 TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor Features • Medium Power Linear Switching Applications • Complement to TIP42 Series 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number TIP41A TIP41B TIP41C TIP41CTU Top Mark TIP41A TIP41B TIP41C TIP41C Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Bulk Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit TIP41A 60 VCBO Collector-Base Voltage TIP41B TIP41C 80 100 V TIP41A 60 VCEO Collector-Emitter Voltage TIP41B TIP41C 80 100 V VEBO IC ICP IB TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Junction Temperature Storage Temperature Range 5 6 10 2 150 -65 to 150 V A A A °C °C © 2000 Fairchild Semiconductor Corporation TIP41A / TIP41B / TIP41C Rev. 1.1.0 www.fairchildsemi.com TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor Thermal Characteristics Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Collector Dissipation (TC = 25°C) Collector Dissipation (TA = 25°C) Value 65 2 Unit W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol Parameter VCEO(sus) TIP41A Collector-Emitter Sustaining Voltage(1) TIP41B TIP41C ICEO Collector Cut-Off Current TIP41A TIP41B / TIP41C TIP41A ICES Collector Cut-Off Current TIP41B TIP41C IEBO Emitter Cut-Off Current hFE DC Current Gain(1) VCE(sat) Collector-Emitter Saturation Voltage(1) VBE(on) Base-Emitter On Voltage(1) fT Current Gain Bandwidth Product Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. Conditions IC = 30 mA, IB = 0 VCE = 30 V, IB = 0 VCE = 60 V, IB = 0 VCE = 60 V, VEB = 0 VCE = 80 V, VEB = 0 VCE = 100 V, VEB = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 0.3 A VCE = 4 V, IC = 3 A IC = 6 A, IB = 600 mA VCE = 4 V, IC = 6 A VCE = 10 V, IC = 500 mA, f = 1 MHz Min. 60 80 100 30 15 3.0 Max. 0.7 0.7 400 400 400 1 75 1.5 2.0 Unit V mA μA mA V V MHz © 2000 Fairchild Semiconductor Corporation TIP41A / TIP41B / TIP41C Rev. 1.1.0 2 www.fairchildsemi.com TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor 0.5ms 1ms 5ms Typical Performance Characteristics 1000 VCE = 4V 100 hFE, DC CURRENT GAIN 10 IC[A], COLLECTOR CURRENT 1 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain 10000 100 IC(MAX) (PULSE) 10 IC(MAX) (DC) 1 0.1 1 TIP41 VCEO MAX. TIP41A VCEO MAX. TIP41.


TIP41A TIP41B TIP41B


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