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TIP49 Dataheets PDF



Part Number TIP49
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Silicon Transistor
Datasheet TIP49 DatasheetTIP49 Datasheet (PDF)

TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor November 2014 TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor Features • High-Voltage and Switching Applications • High Sustaining Voltage: VCEO(sus) = 250 V, 300 V, 350 V, 400 V • 1 A Rated Collector Current 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number TIP47 TIP47TU TIP48 TIP48TU TIP49 TIP50 TIP50TU Top Mark TIP47 TIP47 TIP48 TIP48 TIP49 TIP50 TIP50 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gau.

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TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor November 2014 TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor Features • High-Voltage and Switching Applications • High Sustaining Voltage: VCEO(sus) = 250 V, 300 V, 350 V, 400 V • 1 A Rated Collector Current 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number TIP47 TIP47TU TIP48 TIP48TU TIP49 TIP50 TIP50TU Top Mark TIP47 TIP47 TIP48 TIP48 TIP49 TIP50 TIP50 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Bulk Rail Bulk Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC ICP IB TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Junction Temperature Storage Temperature Range TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50 Value 350 400 450 500 250 300 350 400 5 1 2 0.6 150 - 65 to 150 Unit V V V A A A °C °C © 2000 Fairchild Semiconductor Corporation TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0 www.fairchildsemi.com TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor Thermal Characteristics Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Collector Dissipation (TC = 25°C) Collector Dissipation (TA = 25°C) Value 40 2 Unit W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol Parameter VCEO(sus) Collector-Emitter Sustaining Voltage(1) ICEO Collector Cut-Off Current ICES Collector Cut-Off Current IEBO Emitter Cut-Off Current TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50 hFE DC Current Gain(1) VCE(sat) Collector-Emitter Saturation Voltage(1) VBE(on) Base-Emitter On Voltage(1) fT Current Gain Bandwidth Product Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. Conditions Min. 250 IC = 30 mA, IB = 0 300 350 400 VCE = 150 V, IB = 0 VCE = 200 V, IB = 0 VCE = 250 V, IB = 0 VCE = 300 V, IB = 0 VCE = 350 V, VEB = 0 VCE = 400 V, VEB = 0 VCE = 450 V, VEB = 0 VCE = 500 V, VEB = 0 VBE = 5 V, IC = 0 VCE = 10 V, IC = 0.3 A VCE = 10 V, IC = 1 A IC = 1 A, IB = 0.2 A VCE = 10 V, IC = 1 A VCE = 10 V, IC = 0.2 A, f = 1 MHz 30 10 10 Typ. Max. 1 1 1 1 1 1 1 1 1 150 1 1.5 Unit V mA mA mA V V MHz © 2000 Fairchild Semiconductor Corporation TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0 2 www.fairchildsemi.com TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor 1005μ0s0μs 1ms D.C VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Performance Characteristics 1000 100 VCE = 10V 10 10 1 VBE(sat) VCE(sat) 0.1 IC = 5 IB hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain 4 10 1 0.1 0.01 1 TIP47 TIP48 TIP49 TIP50 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area 1000 0.01 0.01 0.1 1 IC[A], COLLECTOR CURRENT 4 Figure 2. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage PC[W], POWER DISSIPATION 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC[oC], CASE TEMPERATURE Figure 4. Power Derating © 2000 Fairchild Semiconductor Corporation TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0 3 www.fairchildsemi.com TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor Physical Dimensions Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2000 Fairchild Semiconductor Corporation TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0 4 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ F-PFS¥ FRFET® Global Power ResourceSM GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET.


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