Document
TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor
November 2014
TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor
Features
• High-Voltage and Switching Applications • High Sustaining Voltage: VCEO(sus) = 250 V, 300 V, 350 V, 400 V • 1 A Rated Collector Current
1 TO-220 1.Base 2.Collector 3.Emitter
Ordering Information
Part Number TIP47
TIP47TU TIP48
TIP48TU TIP49 TIP50
TIP50TU
Top Mark TIP47 TIP47 TIP48 TIP48 TIP49 TIP50 TIP50
Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge)
Packing Method Bulk Rail Bulk Rail Bulk Bulk Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO IC ICP IB TJ
TSTG
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Junction Temperature Storage Temperature Range
TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50
Value 350 400 450 500 250 300 350 400 5 1 2 0.6 150
- 65 to 150
Unit
V
V
V A A A °C °C
© 2000 Fairchild Semiconductor Corporation TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0
www.fairchildsemi.com
TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol PC
Parameter Collector Dissipation (TC = 25°C) Collector Dissipation (TA = 25°C)
Value 40 2
Unit W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus)
Collector-Emitter Sustaining Voltage(1)
ICEO Collector Cut-Off Current
ICES Collector Cut-Off Current IEBO Emitter Cut-Off Current
TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50
hFE DC Current Gain(1)
VCE(sat) Collector-Emitter Saturation Voltage(1) VBE(on) Base-Emitter On Voltage(1)
fT Current Gain Bandwidth Product
Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Conditions
Min.
250
IC = 30 mA, IB = 0
300 350
400
VCE = 150 V, IB = 0 VCE = 200 V, IB = 0 VCE = 250 V, IB = 0 VCE = 300 V, IB = 0 VCE = 350 V, VEB = 0 VCE = 400 V, VEB = 0 VCE = 450 V, VEB = 0 VCE = 500 V, VEB = 0 VBE = 5 V, IC = 0 VCE = 10 V, IC = 0.3 A VCE = 10 V, IC = 1 A IC = 1 A, IB = 0.2 A VCE = 10 V, IC = 1 A VCE = 10 V, IC = 0.2 A, f = 1 MHz
30 10
10
Typ.
Max.
1 1 1 1 1 1 1 1 1 150
1 1.5
Unit V
mA
mA mA V V MHz
© 2000 Fairchild Semiconductor Corporation TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0
2
www.fairchildsemi.com
TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor
1005μ0s0μs 1ms D.C
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Performance Characteristics
1000 100
VCE = 10V
10
10
1 VBE(sat)
VCE(sat) 0.1
IC = 5 IB
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1 0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
4
10
1
0.1
0.01 1
TIP47 TIP48 TIP49 TIP50
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
1000
0.01 0.01
0.1 1
IC[A], COLLECTOR CURRENT
4
Figure 2. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage
PC[W], POWER DISSIPATION
50
40
30
20
10
0 0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 4. Power Derating
© 2000 Fairchild Semiconductor Corporation TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0
3
www.fairchildsemi.com
TIP47 / TIP48 / TIP49 / TIP50 — NPN Silicon Transistor
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© 2000 Fairchild Semiconductor Corporation TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0
4
www.fairchildsemi.com
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