TIPL761B

TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 1200 Volt Blocking Capability 100 W at 25°C Case Temperature E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA SOT-93 PACKAGE (TOP VIEW) B 1 q q C 2 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. TIPL761B TIPL761C TIPL761B TIPL761C TIPL761B TIPL761C SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 1100 1200 1100 1200 500 550 10 4 8 100 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise no...