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TIPL765A Dataheets PDF



Part Number TIPL765A
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN SILICON POWER TRANSISTORS
Datasheet TIPL765A DatasheetTIPL765A Datasheet (PDF)

TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 10 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 1000 Volt Blocking Capability 125 W at 25°C Case Temperature E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA SOT-93 PACKAGE (TOP VIEW) B 1 q q C 2 absolute maximum ratings at 25°C case temperature (unless othe.

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TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 10 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 1000 Volt Blocking Capability 125 W at 25°C Case Temperature E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA SOT-93 PACKAGE (TOP VIEW) B 1 q q C 2 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 10 10 15 125 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage IC = 100 mA TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 0.5 A IC = IC = 2A 5A (see Notes 3 and 4) TC = 100°C (see Notes 3 and 4) TC = 100°C f= 1 MHz 8 150 (see Notes 3 and 4) 15 TC = 100°C TC = 100°C (see Note 2) TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A MIN 400 450 50 50 200 200 50 50 1 60 0.5 1.0 2.5 5.0 1.1 1.3 1.7 1.6 MHz pF V V µA mA µA TYP MAX UNIT V VCE = 850 V ICES V CE = 1000 V V CE = 850 V V CE = 1000 V ICEO IEBO hFE VCE = 400 V V CE = 450 V VEB = VCE = IB = VCE(sat) IB = IB = IB = IB = V BE(sat) Base-emitter saturation voltage Current gain bandwidth product Output capacitance IB = IB = IB = ft Cob VCE = VCB = 10 V 5V 0.4 A 1A 2A 2A 0.4 A 1A 2A 2A 10 V 20 V IC = 10 A IC = 10 A IC = IC = 2A 5A IC = 10 A IC = 10 A IC = 0.5 A IE = 0 f = 0.1 MHz NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance MIN TYP MAX 1 UNIT °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER tsv trv tfi tti txo tsv trv tfi tti txo † TEST CONDITIONS † MIN TYP MAX 2 300 UNIT µs ns ns ns ns µs ns ns ns ns Voltage storage time Voltage rise time Current fall time Current tail time Cross over time Voltage storage time Voltage rise time Current fall time Current tail time Cross over time IC = 10 A V BE(off) = -5 V IB(on) = 2 A TC = 100°C (see Figures 1 and 2) IC = 10 A V BE(off) = -5 V IB(on) = 2 A (see Figures 1 and 2) 200 50 400 3.5 400 300 80 500 Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 BY205-400 33 Ω 1 pF RB (on) 180 µ H vcc V Gen 68 Ω 1 kΩ 0.02 µ F +5V 1 kΩ 2N2222 TUT BY205-400 Vclamp = 400 V 270 Ω BY205-400 1 kΩ 2N2904 5X BY205-400 Adjust pw to obtain IC 47 Ω For IC < 6 A For IC ≥ 6 A VCC = 50 V VCC = 100 V 100 Ω D44H11 V BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti B - E = txo IB A (90%) Base Current C 90% V CE B 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 100 VCE = 5 V TCP765AE COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5·0 TCP765AF hFE - Typical DC Current Gain TC = 125°C TC = 25°C TC = -65°C 4·0 IC = 1 A IC = 2 A IC = 5 A IC = 10 A TC = 25°C 3·0 10 2·0 1·0 1·0 0·1 1·0 IC - Collector Current - A 10 0 0·01 0·1 1·0 10 IB - Base Current.


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