Document
TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q q q
Rugged Triple-Diffused Planar Construction 10 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 1000 Volt Blocking Capability 125 W at 25°C Case Temperature
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAA
SOT-93 PACKAGE (TOP VIEW)
B
1
q q
C
2
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 10 10 15 125 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
1
TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER V CEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage IC = 100 mA TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 0.5 A IC = IC = 2A 5A (see Notes 3 and 4) TC = 100°C (see Notes 3 and 4) TC = 100°C f= 1 MHz 8 150 (see Notes 3 and 4) 15 TC = 100°C TC = 100°C (see Note 2) TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A MIN 400 450 50 50 200 200 50 50 1 60 0.5 1.0 2.5 5.0 1.1 1.3 1.7 1.6 MHz pF V V µA mA µA TYP MAX UNIT V
VCE = 850 V ICES V CE = 1000 V V CE = 850 V V CE = 1000 V ICEO IEBO hFE VCE = 400 V V CE = 450 V VEB = VCE = IB = VCE(sat) IB = IB = IB = IB = V BE(sat) Base-emitter saturation voltage Current gain bandwidth product Output capacitance IB = IB = IB = ft Cob VCE = VCB = 10 V 5V 0.4 A 1A 2A 2A 0.4 A 1A 2A 2A 10 V 20 V
IC = 10 A IC = 10 A IC = IC = 2A 5A
IC = 10 A IC = 10 A IC = 0.5 A IE = 0
f = 0.1 MHz
NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RθJC Junction to case thermal resistance MIN TYP MAX 1 UNIT °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER tsv trv tfi tti txo tsv trv tfi tti txo
†
TEST CONDITIONS
†
MIN
TYP
MAX 2 300
UNIT µs ns ns ns ns µs ns ns ns ns
Voltage storage time Voltage rise time Current fall time Current tail time Cross over time Voltage storage time Voltage rise time Current fall time Current tail time Cross over time IC = 10 A V BE(off) = -5 V IB(on) = 2 A TC = 100°C (see Figures 1 and 2) IC = 10 A V BE(off) = -5 V IB(on) = 2 A (see Figures 1 and 2)
200 50 400 3.5 400 300 80 500
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11 BY205-400 BY205-400
33 Ω 1 pF
RB
(on) 180 µ H vcc
V Gen 68 Ω
1 kΩ 0.02 µ F +5V 1 kΩ
2N2222 TUT BY205-400 Vclamp = 400 V
270 Ω
BY205-400
1 kΩ 2N2904
5X BY205-400
Adjust pw to obtain IC 47 Ω For IC < 6 A For IC ≥ 6 A VCC = 50 V VCC = 100 V 100 Ω
D44H11 V
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti B - E = txo IB
A (90%) Base Current
C
90%
V CE
B
10%
Collector Voltage
D (90%)
E (10%) I C(on) Collector Current F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
PRODUCT
INFORMATION
3
TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 100 VCE = 5 V
TCP765AE
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
5·0
TCP765AF
hFE - Typical DC Current Gain
TC = 125°C TC = 25°C TC = -65°C
4·0
IC = 1 A IC = 2 A IC = 5 A IC = 10 A TC = 25°C
3·0
10
2·0
1·0
1·0 0·1
1·0 IC - Collector Current - A
10
0 0·01
0·1
1·0
10
IB - Base Current.