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TIPP32B Dataheets PDF



Part Number TIPP32B
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description PNP SILICON POWER TRANSISTORS
Datasheet TIPP32B DatasheetTIPP32B Datasheet (PDF)

TIPP32, TIPP32A,TIPP32B, TIPP32C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q q q 20 W Pulsed Power Dissipation 100 V Capability 2 A Continuous Collector Current 4 A Peak Collector Current Customer-Specified Selections Available MDTRAB LP PACKAGE (TOP VIEW) E C B 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIPP32 Collector-base voltage (IE = 0) TIPP32A TIPP32B TIPP32C TIPP32 Col.

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TIPP32, TIPP32A,TIPP32B, TIPP32C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q q q 20 W Pulsed Power Dissipation 100 V Capability 2 A Continuous Collector Current 4 A Peak Collector Current Customer-Specified Selections Available MDTRAB LP PACKAGE (TOP VIEW) E C B 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIPP32 Collector-base voltage (IE = 0) TIPP32A TIPP32B TIPP32C TIPP32 Collector-emitter voltage (IB = 0) TIPP32A TIPP32B TIPP32C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Pulsed power dissipation (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C. 3. VCE = 20 V, IC = 1 A, tp = 10 ms, duty cycle ≤ 2%. V EBO IC ICM IB Ptot PT Tj Tstg TL VCEO VCBO SYMBOL VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -2 -4 -1 0.8 20 -55 to +150 -55 to +150 260 V A A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPP32, TIPP32A,TIPP32B, TIPP32C PNP SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS TIPP32 V (BR)CEO IC = -5 mA IB = 0 TIPP32A TIPP32B TIPP32C VBE = 0 V BE = 0 V BE = 0 V BE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = IC = -1 A -2 A -2 A -2 A (see Notes 4 and 5) (see Notes 4 and 5) (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 20 10 -1 -1.5 V V TIPP32 TIPP32A TIPP32B TIPP32C TIPP32/32A TIPP32B/32C MIN -40 -60 -80 -100 -0.2 -0.2 -0.2 -0.2 -0.3 -0.3 -1 mA mA mA V TYP MAX UNIT (see Note 4) VCE = -40 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio V CE = -60 V V CE = -80 V V CE = -100 V VCE = -30 V V CE = -60 V VEB = VCE = V CE = -5 V -4 V -4 V ICEO IEBO hFE VCE(sat) VBE hfe IB = -375 mA VCE = -4 V VCE = -10 V VCE = -10 V IC = -0.5 A IC = -0.5 A |hfe| NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. PRODUCT INFORMATION 2 TIPP32, TIPP32A,TIPP32B, TIPP32C PNP SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LP003 (TO-92) 5,21 4,44 3,43 MIN. 2,67 2,03 4,19 3,17 2,67 2,03 LP003 Falls Within JEDEC TO-226AA Dimensions Seating Plane 5,34 4,32 1,27 (see Note A) 12,7 MIN. 0,56 0,40 1 3 1,40 1,14 2,67 2,41 2 0,41 0,35 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: Lead dimensions are not controlled in this area. MDXXAX PRODUCT INFORMATION 3 TIPP32, TIPP32A,TIPP32B, TIPP32C PNP SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LP003 (TO-92) - Formed Leads Version 5,21 4,44 3,43 MIN. 2,67 2,03 4,19 3,17 2,67 2,03 LP003 Falls Within JEDEC TO-226AA Dimensions 5,34 4,32 4,00 MAX. 0,56 0,40 1 2 3 2,90 2,40 0,41 0,35 2,90 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAR PRODUCT INFORMATION 4 TIPP32, TIPP32A,TIPP32B, TIPP32C PNP SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 MECHANICAL DATA LPR tape dimensions LP Package (TO-92) Tape (Formed Lead Version) 5,21 4,44 3,43 MIN. 2,67 2,03 5,34 4,32 4,19 3,17 2,67 2,03 4,00 MAX. 0,56 0,40 0,41 0,35 13,70 11,70 32,00 23,00 27,68 17,66 2,50 MIN. 16,50 15,50 11,00 8,50 9,75 8,50 0,50 0,00 19,00 5,50 19,00 17,50 2,90 2,40 2,90 2,40 6,75 5,95 13,00 12,40 ø 4,30 3,70 ALL LINEAR DIMENSIO.


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