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TISP3125H3SL Dataheets PDF



Part Number TISP3125H3SL
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Datasheet TISP3125H3SL DatasheetTISP3125H3SL Datasheet (PDF)

TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1999, Power Innovations Limited, UK JANUARY 1999 - REVISED MAY 1999 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS q Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages DEVICE ‘3070 ‘3080 ‘3095 ‘3125 ‘3135 ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 VDRM V 58 65 75 100 110 120 145 160 190 220 275 V(BO) V 70 80 95 125.

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TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1999, Power Innovations Limited, UK JANUARY 1999 - REVISED MAY 1999 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS q Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages DEVICE ‘3070 ‘3080 ‘3095 ‘3125 ‘3135 ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 VDRM V 58 65 75 100 110 120 145 160 190 220 275 V(BO) V 70 80 95 125 135 145 180 210 250 290 350 SL PACKAGE (TOP VIEW) T G R 1 2 3 MDXXAG device symbol T R q Rated for International Surge Wave Shapes - Guaranteed -40 °C to +85 °C Performance WAVE SHAPE 2/10 µs 8/20 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE ITSP A 500 300 250 200 160 100 SD3XAA G Terminals T, R and G correspond to the alternative line designators of A, B and C q 3-Pin Through-Hole Packaging - Compatible with TO-220AB pin-out - Low Height. . . . . . . . . . . . . . . . . . . . .8.3 mm Low Differential Capacitance - Value at -2 V/-50 V Bias. . . . . . . .67 pF max. q description The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. This TISP3xxxH3SL range consists of eleven voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000 TISP3xxxF3SL series is available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. PRODUCT INFORMATION 1 Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED MAY 1999 absolute maximum ratings, TA = 25°C (unless otherwise noted) RATING ‘3070 ‘3080 ‘3095 ‘3125 ‘3135 Repetitive peak off-state voltage, (see Note 1) ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Junction temperature Storage temperature range Exponential current ramp, Maximum ramp value < 200 A diT/dt TJ Tstg ITSM 55 60 1 400 -40 to +150 -65 to +150 A/µs °C °C A ITSP 500 300 250 220 200 200 200 200 160 100 A VDRM SYMBOL VALUE ± 58 ± 65 ± 75 ±100 ±110 ±120 ±145 ±160 ±190 ±220 ±275 V UNIT NOTES: 1. See Figure 9 for voltage values at lower temperatures. 2. Initially the TISP3xxxH3SL must be in thermal equilibrium. 3. These non-repetitive rated currents are peak values of either polarirty. The rated current values may be applied to the R or T terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the TISP3xxxH3SL returns to its initial conditions. 4. See Figure 10 for impulse current ratings at .


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