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TISP61512P Dataheets PDF



Part Number TISP61512P
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
Datasheet TISP61512P DatasheetTISP61512P Datasheet (PDF)

TISP61511D, TISP61512P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS Copyright © 1997, Power Innovations Limited, UK JULY 1995 - REVISED SEPTEMBER 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION q Dual Voltage-Programmable Protectors. - Wide 0 to -80 V Programming Range - Low 5 mA max. Triggering Current - High 150 mA min. Holding Current Rated for International Surge Wave Shapes VOLTAGE WAVE SHAPE 2/10 µs 1.2/50 µs 0.5/700 µs 10/700 µs 10/1000 µs STANDARD TR-NWT-.

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TISP61511D, TISP61512P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS Copyright © 1997, Power Innovations Limited, UK JULY 1995 - REVISED SEPTEMBER 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION q Dual Voltage-Programmable Protectors. - Wide 0 to -80 V Programming Range - Low 5 mA max. Triggering Current - High 150 mA min. Holding Current Rated for International Surge Wave Shapes VOLTAGE WAVE SHAPE 2/10 µs 1.2/50 µs 0.5/700 µs 10/700 µs 10/1000 µs STANDARD TR-NWT-001089 ETS 300 047-1 RLM88/I3124 K17, K20, K21 TR-NWT-001089 ITSP A 170 90 40 40 30 '61511D PACKAGE (TOP VIEW) (Tip) K1 NC 1 2 3 4 8 7 6 5 K1 (Tip) A A (Ground) (Ground) (Gate) G (Ring) K2 q K2 (Ring) MD6XAL NC - No internal connection Terminal typical application names shown in parenthesis '61512P PACKAGE (TOP VIEW) (Tip) K1 1 2 3 4 8 7 6 5 K1 (Tip) A A (Ground) (Ground) q Functional Replacements for DEVICE TYPE LCP1511, LCP1511D, ATTL7591AS, MGSS150-1 LCP1512, LCP1512D, ATTL7591AB, MGSS150-2 8-pin Plastic DIP TISP61512P 8-pin Small-Outline PACKAGE TYPE FUNCTIONAL REPLACEMENT TISP61511D or order as TISP61511DR for Taped and Reeled (Gate) G NC (Ring) K2 K2 (Ring) MD6XAJ NC - No internal connection Terminal typical application names shown in parenthesis device symbol K1 G K2 description The TISP61511D and TISP61512P are dual forward-conducting buffered p-gate overvoltage protectors. They are designed to protect monolithic Subscriber Line Interface Circuits, SLICs, against overvoltages on the telephone line caused by lightning, ac power contact and induction. The TISP61511D and TISP61512P limit voltages that exceed the SLIC supply rail voltage. A SD6XAE Terminals K1, K2 and A correspond to the alternative line designators of T, R and G or A, B and C. The negative protection voltage is controlled by the voltage, VGG, applied to the G terminal. The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -10 V to -70 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply voltage the overvoltage stress on the SLIC is minimised. Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding current of the crowbar prevents d.c. latchup. These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TISP61511D, TISP61512P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS JULY 1995 - REVISED SEPTEMBER 1997 absolute maximum ratings RATING Repetitive peak off-state voltage, IG = 0, -40°C ≤ TJ ≤ 85°C Repetitive peak gate-cathode voltage, V KA = 0, -40°C ≤ TJ ≤ 85°C Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/1000 µs 5/310 µs 0.2/310 µs 1/20 µs 2/10 µs Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2) full-sine-wave, 20 ms 1s Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2) Junction temperature Storage temperature range IGSM TJ Tstg ITSM 5 3.5 2 -55 to +150 -55 to +150 A °C °C A TJ = -40°C TJ = 25, 85°C ITSP 30 40 40 90 120 170 A SYMBOL VDRM VGKRM VALUE -100 -85 UNIT V V NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C ≤ TJ ≤ 85°C, unless otherwise specified. The surge may be repeated after the device returns to its initial conditions. See the applications section for the details of the impulse generators. 2. The rated current values may be applied to either the R-G or T-G terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the G terminal current will be twice the rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature. recommended operating conditions MIN CG Gate decoupling capacitor TYP 220 MAX UNIT nF electrical characteristics, TJ = 25°C (unless otherwise noted) PARAMETER ID V(BO) VGK(BO) Off-state current Breakover voltage Gate-cathode voltage at breakover On-state voltage Forward voltage Peak forward recovery voltage Holding current Gate reverse current Gate trigger current Gate trigger voltage VD = -85 V, VGK .


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