NPN Phototransistor. TEMT3700 Datasheet

TEMT3700 Phototransistor. Datasheet pdf. Equivalent

Part TEMT3700
Description Silicon NPN Phototransistor
Feature TEMT3700 Vishay Telefunken Silicon NPN Phototransistor Description TEMT3700 is a high speed silicon.
Manufacture Vishay Telefunken
Datasheet
Download TEMT3700 Datasheet

TEMT3700 Vishay Telefunken Silicon NPN Phototransistor Desc TEMT3700 Datasheet
Recommendation Recommendation Datasheet TEMT3700 Datasheet




TEMT3700
Silicon NPN Phototransistor
Description
TEMT3700 is a high speed silicon NPN epitaxial
planar phototransistor in a miniature PL–CC–2 pack-
age for surface mounting on printed boards. Due to its
waterclear epoxy lens the device is sensitive to visible
and near infrared radiation.
Features
D PL–CC–2 SMD package
D Extra wide viewing angle ϕ = ± 60°
D Package notch = collector
D Base terminal not connected
D Fast response times
D Suitable for visible and near infrared radiation
D Matches with IR emitter TSMS3700
Applications
Miniature switches
Counters and sorters
Interrupters
Tape and card readers
Encoders
Position sensors
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
x xtp/T 0.1, tp 10ms
xTamb 55 °C
xt 3 s
TEMT3700
Vishay Telefunken
94 8553
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
70
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81555
Rev. 1, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)



TEMT3700
TEMT3700
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Emitter Breakdown IC = 1 mA
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Angle of Half Sensitivity
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E=0
lEe = 1 mW/cm2,
= 950 nm, VCE = 5 V
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Rise Time / Fall Time
Cut–Off Frequency
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
l WVS = 5 V, IC = 1 mA,
= 950 nm, RL = 1 k
l WVS = 5 V, IC = 1 mA,
= 950 nm, RL = 100
WVS = 5 V, IC = 2 mA,
RL = 100
Symbol Min
Typ Max
V(BR)CE 70
O
ICEO
1 200
CCEO
3
Ica 0.25
0.5
ϕ
ll0p.5
VCEsat
±60
830
620...980
0.15
0.3
tr / tf
6
tr / tf
2
fc 180
Unit
V
nA
pF
mA
deg
nm
nm
V
ms
ms
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125 104
100
103
75 VCE=20V
RthJA
102
50
101
25
0
0
94 8308
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20
94 8304
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81555
Rev. 1, 20-May-99





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