TEST2600
Vishay Telefunken
Silicon NPN Phototransistor
Description
TEST2600 is a high sensitive silicon NPN epitaxial p...
TEST2600
Vishay Telefunken
Silicon
NPN Photo
transistor
Description
TEST2600 is a high sensitive silicon
NPN epitaxial planar photo
transistor in a miniature side view plastic package with cylindrical lens. Its epoxy casting is designed as a infrared filter to spectrally match to GaAs IR emitters (lp=950nm).
Features
D D D D D
High radiant sensitivity (2.5 mA) Miniature side view package with cylindrical lens Very wide viewing angle ϕ = ± 30°/ ± 60° Suitable for near IR radiation Matches with TSSS2600 IR emitter
94 8673
Applications
Optical switches Counters and sorters Interrupters Tape and card readers Encoders Position sensors
Absolute Maximum Ratings
Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 70 5 50 100 100 100 –55...+100 260 450 Unit V V mA mA mW °C °C °C K/W
tp/T = 0.5, tp 10 ms Tamb 55 °C
x
x
t
x 3 s, 2 mm from case
Document Number 81562 Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600 1 (5)
TEST2600
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Angle g of Half Sensitivity y Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Ee = 1 mW/cm2,...