N-CHANNEL JFET. TF202 Datasheet

TF202 JFET. Datasheet pdf. Equivalent

Part TF202
Description N-CHANNEL JFET
Feature UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS N-CHANNEL JFE.
Manufacture Unisonic Technologies
Datasheet
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TF202
UNISONIC TECHNOLOGIES CO., LTD
TF202
N-CHANNEL JFET CAPACITOR
MICROPHONE APPLICATIONS
N-CHANNEL JFET
DESCRIPTION
The UTC TF202 uses advanced trench technology to provide
excellent RDS (ON), low gate charge and operation with low gate
voltages. This device is suitable for use in capacitor microphone
applications.
FEATURES
*Suited for use in audio, telephone capacitor microphones.
*Good voltage characteristic.
*Good transient characteristic.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
TF202L-xx-AE3-R
TF202G-xx-AE3-R
TF202L-xx-AN3-R
TF202G-xx-AN3-R
TF202L-xx-A3C-R
TF202G-xx-A3C-R
TF202L-xx-AQ3-R
TF202G-xx-AQ3-R
Note: Pin Assignment: D: Drain S: Source G: Gate
Package
SOT-23
SOT-523
SOT-113S
SOT-723
Pin Assignment
123
DSG
DSG
DSG
DSG
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
TF202-E3
TF202-E4
E3
TF202-E5
E5
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 4
QW-R210-001.K



TF202
TF202
N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS ( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Gate Drain Voltage
VGDO -20 V
Gate Current
IG 10 mA
Drain Current
ID 10 mA
Power Dissipation
PD 100 mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Gate Drain Breakdown Voltage
Gate Source Cut off Voltage
Zero-Gate Voltage Drain Current
Drain Current
Forward Transfer Admittance
Input Capacitance
Voltage Gain
Delta Voltage Gain
Frequency Characteristic
Output Noise Voltage
Total Harmonic distortion
SYMBOL
BVGDO
VGS(OFF)
IDSS
ID
lyfsl
CISS
GV
GV
GV(f)
VNO
THD
TEST CONDITIONS
MIN TYP MAX UNIT
IG=-100μA
-20 V
VDS=2V, ID=1μA
-0.38
V
VDS=2V, VGS=0V
100 350 μA
VDD=2V, RL=2.2k,
Cg=5pF
IDSS=100μA
IDSS=250μA
IDSS=350μA
98
244
337
μA
μA
μA
VDS=2V, VGS=0V
1.43 mS
VDS=2, VGS=0, f=1MHz
5.0 pF
VDD=2V, RL=2.2k,
Cg=5pF, f=1kHz,
VIN=10mV
IDSS=100μA
IDSS=250μA
IDSS=350μA
0.1
1.95
2.25
dB
dB
dB
VIN=10mV, RL=2.2k, Cg=5pF,
f=1kH, VDD=2V to1.5V
-0.5 dB
VIN=10mV, RL=2.2k, Cg=5pF,
VDD=2V, f=1kHz to 110kHz
-0.2 dB
VDD=2V, Cg=5pF,
A-curve filter
RL=1k
RL=2.2k
-107
-102
dB
dB
VDD=2V, RL=2.2k, Cg=5pF, f=1kHz,
VIN=50mV
0.9
%
CLASSIFICATION OF IDSS
RANK
RANGE
E3
100-170
E4
140-240
E5
210-350
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R210-001.K





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