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TF21918B Dataheets PDF



Part Number TF21918B
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Fast Switching Thyristor
Datasheet TF21918B DatasheetTF21918B Datasheet (PDF)

TF219..B TF219..B Fast Switching Thyristor Replaces March 1998 version, DS4271-2.3 DS4271-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2000V IT(RMS) 190A ITSM 1200A dV/dt 200V/µs dI/dt 500A/µs tq 40µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 2000 1800 1600 1400 Conditions TF219 2.

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TF219..B TF219..B Fast Switching Thyristor Replaces March 1998 version, DS4271-2.3 DS4271-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2000V IT(RMS) 190A ITSM 1200A dV/dt 200V/µs dI/dt 500A/µs tq 40µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 2000 1800 1600 1400 Conditions TF219 20B TF219 18B TF219 16B TF219 14B VRSM = VRRM + 100V IDRM = IRRM = 15mA at VRRM or VDRM & Tvj Lower voltage grades available. Outline type code: MU86. See Package Details for further information. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 120 190 Units A A 1/13 TF219..B SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 1.2 7.2 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 3.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 3.3 125 150 3.6 o Min. dc Anode dc - Max. 0.1 0.19 0.24 0.02 0.04 125 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN MEASUREMENT OF RECOVERED CHARGE - QRA1 Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR 0.5x IRR 2/13 TF219..B DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 150A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C VT(TO) rT tgd t(ON)TOT IH Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 100A, VD = 50V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 125˚C, IT = 100A, VR = 50V, tq code: B dV/dt = 200V/µs (Linear to 60% VDRM), dIR/dt = 30A/µs, Gate open circuit Non-repetitive 800 2.0 5.0 3* 1.5* 60 40 Repetitive 50Hz Min. Max. 2.75 15 200 500 Units V mA V/µs A/µs A/µs V mΩ µs µs mA µs tq Turn-off time *Typical value. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6Ω VDRM = 12V, Tcase = 25oC, RL = 6Ω At VDRM Tcase = 125oC, RL = 1kΩ Typ. Max. 3.0 200 0.2 5.0 4 16 3 Units V mA V V A W W 3/13 TF219..B CURVES 4/13 TF219..B 5/13 TF219..B NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω 6/13 TF219..B NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 7/13 TF219..B NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 8/13 TF219..B NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 9/13 TF219..B NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 10/13 TF219..B NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 11/13 TF219..B PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes 3.6 x 2.0 deep (in both electrodes) 6.3 Cathode tab Cathode Ø 42 max Ø19nom Ø1.5 Gate Ø19nom Ø 38 max Anode Nominal weight: 50g Clamping force: 3.5kN ±10% Lead length: 250mm Package outine type code: MU86 ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors The effect of temperature on thyristor performance Thyristor and diode measurement with a multi-meter Turn-on performance of thy.


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