3A Thyristor. TF361M Datasheet

TF361M Thyristor. Datasheet pdf. Equivalent


Part TF361M
Description TO-220 3A Thyristor
Feature TO-220 3A Thyristor TF321M / TF341M / TF361M s Features qRepetitive peak off-state voltage: VDRM=20.
Manufacture Sanken electric
Datasheet
Download TF361M Datasheet


TO-220 3A Thyristor TF321M / TF341M / TF361M s Features qRe TF361M Datasheet
TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF36 TF361M-A Datasheet
Recommendation Recommendation Datasheet TF361M Datasheet




TF361M
TO-220 3A Thyristor
TF321M / TF341M / TF361M
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V
qAverage on-state current: IT(AV)=3A
qGate trigger current: IGT=10mA max
External Dimensions
(Unit: mm)
10.4max
5.0max
2.1max
φ 3.75±0.1
a
b
1.35±0.15
2.5±0.1
2.5±0.1
0.65 +–00..12
1.7±0.2
(1) (2) (3)
(1). Cathode (K)
a. Part Number
(2). Anode (A)
b. Lot Number
(3). Gate (G)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Symbol
VDRM
VRRM
VDSM
VRSM
IT(AV)
IT(RMS)
ITSM
IFGM
VFGM
VRGM
PGM
PG(AV)
Tj
Tstg
Ratings
TF321M TF341M TF361M
200 400 600
200 400 600
300 500 700
300 500 700
3.0
4.7
60
2.0
10
5.0
5.0
0.5
–40 to +125
–40 to +125
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
Conditions
Tj= – 40 to +125°C, RGK =1k
50Hz Half-cycle sinewave, Continuous current, Tc=102°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
sElectrical Characteristics
Parameter
Symbol
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
IDRM
IRRM
VTM
VGT
IGT
VGD
IH
dv/dt
tq
Rth
min
0.1
Ratings
typ
2.0
4.0
50
30
max
2.0
2.0
1.4
1.5
10
3.0
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/ W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1k
TC=25°C, ITM=5A
VD=6V, RL=10, TC=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k
RGK=1k, Tj=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k, CGK=0.033µF
Tc=25°C
Junction to case
6



TF361M
vT iT Characteristics (max)
100
50
Tj =125°C
10 Tj = 25°C
5
1
0.5
0.3
1.0
2.0 3.0
On-state voltage vT ( V )
4.0
IT(AV) – PT(AV) Characteristics
50Hz Half-cycle sinewave
6 θ: Conduction angle
5 0° θ 180°
4
3
2
1
0
012 34 5
Average on-state current IT(AV) (A)
Pulse trigger temperature
vCharacteristics gt (Typical)
30
10
TC=– 40°C
–20°C
25°C
75°C
125°C
vgt
50%
tw
1
0.1
0.05
0.5 1
10 102 103
Pulse width t w (µs)
104
VGT temperature Characteristics
(Typical)
1.0
(VD=6V, RL=10)
0.8
0.6
0.4
0.2
0
–40 0 25 50 75 100 125
Junction temperature Tj (°C)
TF321M / TF341M / TF361M
ITSM Ratings
100
80
60
Initial junction temperature
Tj=125°C
ITSM
10 ms
1cycle
40
20
0
1
5 10
50 100
Number of cycle
IT(AV) – Tc Ratings
150
125
100
50Hz Half-cycle sinewave
θ: Conduction angle
180° θ 0°
75
50
25
0
0 1 23 4
Average on-state current IT(AV) (A)
5
Pulse trigger temperature
Characteristics igt (Typical)
30
10
TC=– 40°C
–20°C
25°C
75°C
125°C
igt
50%
tw
1
0.1
0.05
0.5 1
10 102 103
Pulse width t w (µs)
104
IGT temperature Characteristics
(Typical)
6
(VD=6V, RL=10)
5
4
3
2
1
0
–40
0 25 50 75 100 125
Junction temperature Tj (°C)
Gate Characteristics
12
2
10
1
8
0
0 10 20 30
6 Gate trigger current IGT (mA)
4
2 See graph at the upper right
0
012
Gate current iGF (A)
3
IH temperature Characteristics
(Typical)
15 (RGK=1k)
10
5
0
–40
0 25 50 75 100 125
Junction temperature Tj (°C)
Transient thermal resistance
Characteristics (Junction to case)
10
1
0.1
1
10 102 103
t, Time (ms)
104
7







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