sensitive Thyristor. TF361M-A Datasheet

TF361M-A Thyristor. Datasheet pdf. Equivalent


Part TF361M-A
Description TO-220 3A High sensitive Thyristor
Feature TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF361M-A s Features qRepetitive peak off-sta.
Manufacture Sanken electric
Datasheet
Download TF361M-A Datasheet


TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF36 TF361M-A Datasheet
Recommendation Recommendation Datasheet TF361M-A Datasheet




TF361M-A
TO-220 3A High sensitive Thyristor
TF321M-A, TF341M-A, TF361M-A
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V
qAverage on-state current: IT(AV)=3A
qHigh sensitive Gate trigger Current: IGT=0.1mA max
External Dimensions
(Unit: mm)
10.4max
5.0max
2.1max
φ 3.75±0.1
a
b
1.35±0.15
2.5±0.1
2.5±0.1
0.65 +–00..12
1.7±0.2
(1) (2) (3)
(1). Cathode (K)
a. Part Number
(2). Anode (A)
b. Lot Number
(3). Gate (G)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Symbol
VDRM
VRRM
VDSM
VRSM
IT(AV )
IT(RMS)
ITSM
IFGM
VFGM
VRGM
PGM
PG (AV)
Tj
Tstg
Ratings
TF321M-A TF341M-A TF361M-A
200 400 600
200 400 600
300 500 700
300 500 700
3.0
4.7
60
2.0
10
5.0
5.0
0.5
– 40 to +110
– 40 to +125
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
Conditions
Tj= – 40 to +125°C, RGK =1k
50Hz Half-cycle sinewave, Continuous current, Tc=87°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
sElectrical Characteristics
Parameter
Symbol
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
IDRM
IRRM
VTM
VGT
IGT
VGD
IH
dv/dt
tq
Rth
min
0.1
Ratings
typ
1.0
20
30
max
1.0
1.0
1.4
1
0.1
3.0
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1k
TC=25°C, ITM=5A
VD=6V, RL=10, TC=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k
RGK=1k, Tj=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k, CGK=0.033µF
Tc = 25°C
Junction to case
18



TF361M-A
vT iT Characteristics (max)
100
50
10
5
1
0.5
0.3
1.0
2.0 3.0
On-state voltage vT ( V )
4.0
IT(AV) – PT(AV) Characteristics
7
50Hz Half-cycle sinewave
θ : Conduction angle
6
0° θ 180°
5
4
180°
150°
120°
90°
60°
DC
θ = 30°
3
2
1
0
01 234
Average on-state current IT(AV) (A)
5
Pulse trigger temperature
vCharacteristics gt (Typical)
50
vgt
50%
tw
10
5
TF321M-A, TF341M-A, TF361M-A
ITSM Ratings
80
60
Initial junction temperature
Tj=125°C
I TSM
10 ms
1 cycle
40
20
0
1
5 10
50 100
Number of cycle
IT(AV) – Tc Ratings
150
125
100
50Hz Half-cycle sinewave
θ : Conduction angle
0° θ 180°
75
50
25
0
012 345
Average on-state current IT(AV) (A)
Pulse trigger temperature
Characteristics igt (Typical)
50
igt
50%
tw
10
5
Gate Characteristics
12
10
8
6
4
2
0
012
Gate current iGF (A)
3
1
0.5
1
10 102
Pulse width tw (µs)
103
VGT temperature Characteristics
(Typical)
1.0
(VD=6V, RL=10)
0.8
0.6
0.4
0.2
0
– 40 0 25 50 75 100 125
Junction temperature Tj (°C)
1
0.5
1
10 102
Pulse width t w (µs)
103
IGT temperature Characteristics
(Typical)
24
(VD=6V, RL=10)
20
Transient thermal resistance
Characteristics (Junction to case)
10
1
10
0
–40 0 25 50 75 100 125
Junction temperature Tj (°C)
0.1
1
10 102 103
t, Time (ms)
104
19







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)