5A Thyristor. TF541S Datasheet

TF541S Thyristor. Datasheet pdf. Equivalent


Part TF541S
Description TO-220F 5A Thyristor
Feature TO-220F 5A Thyristor TF521S, TF541S, TF561S s Features qRepetitive peak off-state voltage: VDRM=200.
Manufacture Sanken electric
Datasheet
Download TF541S Datasheet


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TF541S
TO-220F 5A Thyristor
TF521S, TF541S, TF561S
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V
qAverage on-state current: IT(AV)=5A
qGate trigger current: IGT=15mA max
qIsolation voltage: VISO=1500V (50Hz Sine wave, RMS )
qUL approved type available
External Dimensions
(Unit: mm)
φ3.3±0.2 10.0±0.2
4.2±0.2
2.8 C 0.5
a
b
1.35±0.15
1.35±0.15
0.85 +– 00..12
2.54
2.54 0.45 +–00..12
2.4±0.2
2.2±0.2
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
VDRM
VRRM
VDSM
VRSM
IT(AV)
IT(RMS)
ITSM
IFGM
VFGM
VRGM
PGM
PG (AV)
Tj
Tstg
VISO
Ratings
TF521S TF541S TF561S
200 400 600
200 400 600
300 500 700
300 500 700
5.0
7.8
80
2.0
10
5.0
5.0
0.5
– 40 to +125
– 40 to +125
1500
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
V
Conditions
Tj= – 40 to +125°C, RGK =1k
50Hz Half-cycle sinewave, Continuous current, Tc=87°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Symbol
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
IDRM
IRRM
VTM
VGT
IGT
VGD
IH
dv/dt
tq
Rth
min
0.1
Ratings
typ
3.0
4.0
50
30
max
2.0
2.0
1.4
1.5
15
4.0
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/ W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1k
TC=25°C, ITM=10A
VD=6V, RL=10, TC=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k
RGK=1k, Tj=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k, CGK=0.033µF
Tc=25°C
Junction to case
12



TF541S
TF521S, TF541S, TF561S
vT iT Characteristics (max)
100
50
Tj =125°C
10
5
Tj = 25°C
1
0.5
0.6 1.0 2.0 3.0
On-state voltage vT ( V )
3.6
IT(AV) – PT(AV) Characteristics
12
50Hz Half-cycle sinewave
θ : Conduction angle
10
180° θ 0°
8
6
4
2
0
0 2 4 6 8 10
Average on-state current IT(AV) (A)
Pulse trigger temperature
vCharacteristics gt (Typical)
2.0
Tj =– 40°C
1.5 –20°C
vgt
tw
1.0
0.5
0.5 1
25°C
75°C
125°C
10 100
Pulse width t w (µs)
1000
VGT temperature Characteristics
(Typical)
1.2
(VD=6V, RL=10)
1.0
0.8
0.6
0.4
0.2
0
– 40
0 25 50 75 100 125
Junction temperature Tj (°C)
ITSM Ratings
100
80
60
Initial junction temperature
Tj=125°C
I TSM
10 ms
1 cycle
50Hz
40
20
0
1
5 10
50 100
Number of cycle
IT(AV) – Tc Ratings
150
125
100
50Hz Half-cycle sinewave
θ : Conduction angle
180° θ 0°
75
50
25
0
024 68
Average on-state current IT(AV) (A)
10
Pulse trigger temperature
Characteristics igt (Typical)
30
10
Tj =– 40°C
5
–20°C
25°C
igt
tw
1
0.5
0.2
0.5 1
75°C
125°C
10 100
Pulse width t w (µs)
1000
IGT temperature Characteristics
(Typical)
50
(VD=6V, RL=10)
30
10
5
3
1
–40
0 25 50 75 100 125
Junction temperature Tj (°C)
Gate Characteristics
14
2
12
1
10
0
0 10 20 30
8 Gate trigger current IGT (mA)
6
4
2 See graph at the upper right
0
012
Gate current iGF (A)
3
IH temperature Characteristics
(Typical)
100 (VD=30V, RGK=1k)
50
10
5
3
–40 0 25 50 75 100 125
Junction temperature Tj (°C)
Transient thermal resistance
Characteristics (Junction to case)
10
1
0.1
1
10 102 103 104 105
t, Time (ms)
13







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