Switching Thyristor. TF66610A Datasheet

TF66610A Thyristor. Datasheet pdf. Equivalent


Dynex Semiconductor TF66610A
Replaces March 1998 version, DS4274-2.2
TF666..A
TF666..A
Fast Switching Thyristor
DS4274-3.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers
s UPS
s Railway Traction
s Induction Heating
s AC Motor Drives
s Cycloconverters
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dV/dt
1400V
700A
9000A
300V/µs
dI/dt 500A/µs
tq 20µs
FEATURES
s Double Side Cooling
s High Surge Capability
s High Voltage
VOLTAGE RATINGS
Type Number
TF666 14A
TF666 12A
TF666 10A
TF666 08A
TF666 06A
Repetitive
Peak
Voltages
VV
DRM RRM
1400
1200
1000
800
600
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
I = I = 35mA
DRM RRM
at V or V & T
RRM
DRM
vj
Outline type code: MU171.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Half sinewave, 50Hz, Tcase = 80oC
Half sinewave, 50Hz, Tcase = 80oC
Max.
446
Units
A
700 A
1/13


TF66610A Datasheet
Recommendation TF66610A Datasheet
Part TF66610A
Description Fast Switching Thyristor
Feature TF66610A; TF666..A TF666..A Fast Switching Thyristor Replaces March 1998 version, DS4274-2.2 DS4274-3.0 Janua.
Manufacture Dynex Semiconductor
Datasheet
Download TF66610A Datasheet




Dynex Semiconductor TF66610A
TF666..A
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) on-state current
TSM
I2t I2t for fusing
Conditions
10ms half sine; V = 0% V , T = 125˚C
R RRM j
10ms half sine; VR = 0% VRRM, Tj = 125˚C
Max. Units
9.0 kA
405.0 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
T Virtual junction temperature
vj
T Storage temperature range
stg
- Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 10.0kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.05 oC/W
- 0.095 oC/W
- 0.11 oC/W
- 0.01 oC/W
- 0.02 oC/W
- 125 oC
- 125 oC
-40 150
oC
9.5 10.5 kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
tp = 1ms
dIR/dt
QRA1
0.5x IRR
IRR
2/13



Dynex Semiconductor TF66610A
DYNAMIC CHARACTERISTICS
TF666..A
Symbol
Parameter
Conditions
Min. Max. Units
V Maximum on-state voltage
TM
At 1500A peak, T = 25oC
case
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V T = 125oC, Gate open circuit
DRM j
dI/dt Rate of rise of on-state current
Gate source 20V, 20
tr 0.5µs, Tj = 125˚C
Repetitive 50Hz
Non-repetitive
VT(TO)
Threshold voltage
At Tvj = 125oC
rT On-state slope resistance
At Tvj = 125oC
tgd
t(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 50A,
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
I Holding current
H
T = 25oC, I = 1A, V = 12V
j TM D
I Latching current
L
t Turn-off time
q
*Typical value.
T = 25oC, I = 0.5A, V = 12V
jG
D
Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% VDRM),
tq code: A
dIR/dt = 50A/µs, Gate open circuit
-
-
-
-
-
-
-
-
-
-
-
-
2.1 V
35 mA
300 V/µs
500 A/µs
800 A/µs
1.24 V
0.57 m
1.5* µs
3* µs
80* mA
500* mA
20 µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
I
GT
V
GD
VRGM
IFGM
P
GM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 12V, Tcase = 25oC, RL = 6
VDRM = 12V, Tcase = 25oC, RL = 6
At
V
DRM
T
case
=
125oC,
R
L
=
1k
Anode positive with respect to cathode
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
- 5.0 V
- 4A
- 16 W
- 3W
3/13





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