Switching Thyristor. TF70725L Datasheet

TF70725L Thyristor. Datasheet pdf. Equivalent


Dynex Semiconductor TF70725L
Replaces March 1998 version, DS4275-2.2
TF707..L
TF707..L
Fast Switching Thyristor
DS4275-3.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers
s UPS
s Railway Traction
s Induction Heating
s AC Motor Drives
s Cycloconverters
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dV/dt
2500V
600A
9000A
300V/µs
dI/dt 500A/µs
tq 100µs
FEATURES
s Double Side Cooling
s High Surge Capability
s High Voltage
VOLTAGE RATINGS
Type Number
TF707 25L
TF707 24L
TF707 22L
TF707 20L
Repetitive
Peak
Voltages
VV
DRM RRM
2500
2400
2200
2000
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
I = I = 60mA
DRM RRM
at V or V & T
RRM
DRM
vj
Outline type code: MU171.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Half sinewave, 50Hz, Tcase = 80oC
Half sinewave, 50Hz, Tcase = 80oC
Max.
380
Units
A
600 A
1/5


TF70725L Datasheet
Recommendation TF70725L Datasheet
Part TF70725L
Description Fast Switching Thyristor
Feature TF70725L; TF707..L TF707..L Fast Switching Thyristor Replaces March 1998 version, DS4275-2.2 DS4275-3.0 Janua.
Manufacture Dynex Semiconductor
Datasheet
Download TF70725L Datasheet




Dynex Semiconductor TF70725L
TF707..L
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) on-state current
TSM
I2t I2t for fusing
Conditions
10ms half sine; V = 0% V , T = 125˚C
R RRM j
10ms half sine; VR = 0% VRRM, Tj = 125˚C
Max. Units
7.0
245 x 103
kA
A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
T Virtual junction temperature
vj
T Storage temperature range
stg
- Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 15.0kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.04 oC/W
- 0.072 oC/W
- 0.096 oC/W
- 0.01 oC/W
- 0.02 oC/W
- 125 oC
- 125 oC
-40 150
oC
14.25 15.75 kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
tp = 1ms
dIR/dt
QRA1
0.5x IRR
IRR
2/5



Dynex Semiconductor TF70725L
DYNAMIC CHARACTERISTICS
TF707..L
Symbol
Parameter
Conditions
Min. Max. Units
V Maximum on-state voltage
TM
At 1000A peak, T = 125oC
case
- 2.8 V
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
- 80 mA
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V T = 125oC, Gate open circuit -
DRM j
300 V/µs
dI/dt Rate of rise of on-state current
Gate source 20V, 20
tr 0.5µs, Tj = 125˚C
Repetitive 50Hz
Non-repetitive
-
-
500 A/µs
800 A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC
- 1.8 V
rT On-state slope resistance
At Tvj = 125oC
- 1.0 m
tgd
t(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 50A,
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
- -* µs
- -* µs
I Holding current
H
T = 25oC, I = 1A, V = 12V
j TM D
100*
-
mA
I Latching current
L
tq Turn-off time
QRR Reverse recovery charge
*Typical value.
T = 25oC, I = 0.5A, V = 12V
jG
D
300*
-
mA
Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% VDRM),
tq code: L
dIR/dt = 50A/µs, Gate open circuit
-
-
100 µs
500 µC
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
I
GT
VGD
VFGM
V
FGN
VRGM
I
FGM
PGM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 12V, RL = 6, Tcase = 25oC
VDRM = 12V, RL = 6, Tcase = 25oC
At VDRM Tcase = 125oC, RL = 1k,
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
Typ. Max. Units
- 3.0 V
- 300 mA
- 0.25 V
- 30 V
- 0.25 V
- 5.0 V
- 10 A
- 50 W
- 3.0 W
3/5





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