Switching Thyristor. TF70820B Datasheet

TF70820B Thyristor. Datasheet pdf. Equivalent


Dynex Semiconductor TF70820B
Replaces March 1998 version, DS4276-2.2
TF708..B
TF708..B
Fast Switching Thyristor
DS4276-3.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers
s UPS
s Railway Traction
s Induction Heating
s AC Motor Drives
s Cycloconverters
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dV/dt
2000V
750A
8000A
300V/µs
dI/dt 500A/µs
tq 40µs
FEATURES
s Double Side Cooling
s High Surge Capability
s High Voltage
VOLTAGE RATINGS
Type Number
TF708 20B
TF708 18B
TF708 16B
Repetitive
Peak
Voltages
VV
DRM RRM
2000
1800
1600
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
I = I = 60mA
DRM RRM
at V or V & T
RRM
DRM
vj
Outline type code: MU171.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Half sinewave, 50Hz, Tcase = 80oC
Half sinewave, 50Hz, Tcase = 80oC
Max.
480
Units
A
750 A
1/13


TF70820B Datasheet
Recommendation TF70820B Datasheet
Part TF70820B
Description Fast Switching Thyristor
Feature TF70820B; TF708..B TF708..B Fast Switching Thyristor Replaces March 1998 version, DS4276-2.2 DS4276-3.0 Janua.
Manufacture Dynex Semiconductor
Datasheet
Download TF70820B Datasheet




Dynex Semiconductor TF70820B
TF708..B
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) on-state current
TSM
I2t I2t for fusing
Conditions
10ms half sine; V = 0% V , T = 125˚C
R RRM j
10ms half sine; VR = 0% VRRM, Tj = 125˚C
Max. Units
8.0
320 x 103
kA
A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
T Virtual junction temperature
vj
T Storage temperature range
stg
- Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 15.0kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.04 oC/W
- 0.072 oC/W
- 0.096 oC/W
- 0.01 oC/W
- 0.02 oC/W
- 125 oC
- 125 oC
-40 150
oC
14.25 15.75 kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
tp = 1ms
dIR/dt
QRA1
0.5x IRR
IRR
2/13



Dynex Semiconductor TF70820B
DYNAMIC CHARACTERISTICS
TF708..B
Symbol
Parameter
Conditions
Min. Max. Units
V Maximum on-state voltage
TM
At 2000A peak, T = 25oC
case
-
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V T = 125oC, Gate open circuit -
DRM j
dI/dt Rate of rise of on-state current
Gate source 20V, 20
tr 0.5µs, Tj = 125˚C
Repetitive 50Hz
Non-repetitive
-
-
VT(TO)
Threshold voltage
At Tvj = 125oC
-
rT On-state slope resistance
At Tvj = 125oC
-
tgd
t(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 50A,
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
-
-
I Holding current
H
T = 25oC, I = 1A, V = 12V
j TM D
100*
I Latching current
L
t Turn-off time
q
*Typical value.
T = 25oC, I = 0.5A, V = 12V
jG
D
300*
Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% VDRM),
tq code: B
dIR/dt = 50A/µs, Gate open circuit
-
2.8
60
300
500
800
1.25
0.77
2*
4*
-
-
40
V
mA
V/µs
A/µs
A/µs
V
m
µs
µs
mA
mA
µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
I
GT
V
GD
VRGM
IFGM
P
GM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 12V, Tcase = 25oC, RL = 6
VDRM = 12V, Tcase = 25oC, RL = 6
At
V
DRM
T
case
=
125oC,
R
L
=
1k
Anode positive with respect to cathode
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
- 5.0 V
- 10 A
- 50 W
- 3W
3/13





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