DatasheetsPDF.com

TF70906Y Dataheets PDF



Part Number TF70906Y
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Fast Switching Thyristor
Datasheet TF70906Y DatasheetTF70906Y Datasheet (PDF)

TF709..Y TF709..Y Fast Switching Thyristor Replaces March 1998 version, DS4277-2.2 DS4277-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 900A ITSM 12000A dV/dt 300V/µs dI/dt 500A/µs tq 25µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF7.

  TF70906Y   TF70906Y


Document
TF709..Y TF709..Y Fast Switching Thyristor Replaces March 1998 version, DS4277-2.2 DS4277-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 900A ITSM 12000A dV/dt 300V/µs dI/dt 500A/µs tq 25µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF709 14Y TF709 12Y TF709 10Y TF709 08Y TF709 06Y VRSM = VRRM + 100V IDRM = IRRM = 40mA at VRRM or VDRM & Tvj Outline type code: MU171. See Package Details for further information. Lower voltage grades available. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 573 900 Units A A 1/13 TF709..Y SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 12.0 720 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 10.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 14.25 125 150 15.75 o Min. dc Anode dc - Max. 0.04 0.072 0.096 0.01 0.02 125 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN MEASUREMENT OF RECOVERED CHARGE - QRA1 Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR 0.5x IRR 2/13 TF709..Y DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 2000A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C VT(TO) rT tgd t(ON)TOT IH IL Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Latching current At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 25oC, IG = 0.5A, VD = 12V Tj = 125˚C, IT = 250A, VR = 50V, tq code: Y dV/dt = 20V/µs (Linear to 60% VDRM), dIR/dt = 50A/µs, Gate open circuit Non-repetitive 100* 300* 800 1.25 0.4 1.5* 3.5* 25 Repetitive 50Hz Min. Max. 2.05 40 300 500 Units V mA V/µs A/µs A/µs V mΩ µs µs mA mA µs tq Turn-off time *Typical value. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6Ω VDRM = 12V, Tcase = 25oC, RL = 6Ω At VDRM Tcase = 125oC, RL = 1kΩ Typ. Max. 3.0 200 0.2 5.0 10 50 3 Units V mA V V A W W 3/13 TF709..Y CURVES 4/13 TF709..Y 5/13 TF709..Y NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω 6/13 TF709..Y NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 7/13 TF709..Y NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 8/13 TF709..Y NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 9/13 TF709..Y NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 10/13 TF709..Y NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω 11/13 TF709..Y PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) Cathode tab Cathode Ø57.8 max Ø34 nom Gate Ø34 nom Ø54 max Weight: 310g Nominal weight: 310g Clamping force: 15kN ±10% Lead length: 250mm Package outine type code: MU171 Anode ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors The effect of temperature on.


TF70820B TF70906Y TF70908Y


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)