Switching Thyristor. TF91318C Datasheet

TF91318C Thyristor. Datasheet pdf. Equivalent


Dynex Semiconductor TF91318C
Replaces March 1998 version, DS4278-2.2
TF913..C
TF913..C
Fast Switching Thyristor
DS4278-3.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers
s UPS
s Railway Traction
s Induction Heating
s AC Motor Drives
s Cycloconverters
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dV/dt
2000V
1300A
17000A
300V/µs
dI/dt 500A/µs
tq 50µs
FEATURES
s Double Side Cooling
s High Surge Capability
s High Voltage
VOLTAGE RATINGS
Type Number
TF913 20C
TF913 18C
TF913 16C
Repetitive
Peak
Voltages
VV
DRM RRM
2000
1800
1600
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
I = I = 60mA
DRM RRM
at V or V & T
RRM
DRM
vj
Outline type code: MU169.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Half sinewave, 50Hz, Tcase = 80oC
Half sinewave, 50Hz, Tcase = 80oC
Max.
828
Units
A
1300
A
1/13


TF91318C Datasheet
Recommendation TF91318C Datasheet
Part TF91318C
Description Fast Switching Thyristor
Feature TF91318C; TF913..C TF913..C Fast Switching Thyristor Replaces March 1998 version, DS4278-2.2 DS4278-3.0 Janua.
Manufacture Dynex Semiconductor
Datasheet
Download TF91318C Datasheet




Dynex Semiconductor TF91318C
TF913..C
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) on-state current
TSM
I2t I2t for fusing
Conditions
10ms half sine; V = 0% V , T = 125˚C
R RRM j
10ms half sine; VR = 0% VRRM, Tj = 125˚C
Max. Units
17.0 kA
1445 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
T Virtual junction temperature
vj
T Storage temperature range
stg
- Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 23.5kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.020 oC/W
- - oC/W
- - oC/W
- 0.006 oC/W
- 0.012 oC/W
- 125 oC
- 125 oC
-40 150
oC
22.3 24.6 kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
tp = 1ms
dIR/dt
QRA1
0.5x IRR
IRR
2/13



Dynex Semiconductor TF91318C
DYNAMIC CHARACTERISTICS
TF913..C
Symbol
Parameter
Conditions
Min. Max. Units
V Maximum on-state voltage
TM
At 2000A peak, T = 25oC
case
-
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V T = 125oC, Gate open circuit -
DRM j
dI/dt Rate of rise of on-state current
Gate source 20V, 20
tr 0.5µs, Tj = 125˚C
Repetitive 50Hz
Non-repetitive
-
-
VT(TO)
Threshold voltage
At Tvj = 125oC
-
rT On-state slope resistance
At Tvj = 125oC
-
tgd
t(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 50A,
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
4*
2*
I Holding current
H
T = 25oC, I = 1A, V = 12V
j TM D
100*
I Latching current
L
t Turn-off time
q
*Typical value.
T = 25oC, I = 0.5A, V = 12V
jG
D
300*
Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% VDRM),
tq code: C
dIR/dt = 50A/µs, Gate open circuit
-
2.15
60
300
500
800
1.25
0.45
-
-
-
-
50
V
mA
V/µs
A/µs
A/µs
V
m
µs
µs
mA
mA
µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
I
GT
V
GD
VRGM
IFGM
P
GM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 12V, Tcase = 25oC, RL = 6
VDRM = 12V, Tcase = 25oC, RL = 6
At
V
DRM
T
case
=
125oC,
R
L
=
1k
Anode positive with respect to cathode
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
- 5.0 V
- 10 A
- 50 W
- 3W
3/13







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