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TF91512B

Dynex Semiconductor

Fast Switching Thyristor

TF915..B TF915..B Fast Switching Thyristor Replaces December 1998 version, DS4279-3.0 DS4279-4.0 January 2000 APPLICAT...



TF91512B

Dynex Semiconductor


Octopart Stock #: O-326927

Findchips Stock #: 326927-F

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Description
TF915..B TF915..B Fast Switching Thyristor Replaces December 1998 version, DS4279-3.0 DS4279-4.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 1700A ITSM 20000A dV/dt 300V/µs dI/dt 500A/µs tq 40µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF915 14B TF915 12B TF915 10B TF915 08B TF915 06B VRSM = VRRM + 100V IDRM = IRRM = 60mA at VRRM or VDRM & Tvj Outline type code: MU169. See Package Details for further information. Lower voltage grades available. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 1080 1700 Units A A 1/13 TF915..B SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 20.0 2000 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 23.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 22.3 125 150 24.6 o Min. dc Anode dc -...




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