TO-220F 3A Thyristor with built-in Avalanche diode
TO-220F 3A Thyristor with built-in Avalanche diode
TFD312S series
s Features
qWith built-in Avalanche diode qAverage on...
Description
TO-220F 3A Thyristor with built-in Avalanche diode
TFD312S series
s Features
qWith built-in Avalanche diode qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max qIsolation voltage: VISO=1500V(50Hz AC, RMS, 1min.)
13.0 min
External Dimensions
(Unit: mm)
8.4±0.2 0.2 4.0±
10.0±0.2 φ 3.3±0.2
4.2±0.2 C 0.5 2.8
0.3
16.9±
A
a b
1.35±0.15 1.35± +0.2 0.85 – 0.1
0.15
0.8±0.2
3.9±
0.2
G K
2.54 2.2±0.2
2.54
+0.2 0.45 – 0.1
2.4±0.2
a. Part Number b. Lot Number
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Average on-state current RMS on-state current Surge on-state current Squared rated current and time product Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM IT (AV) IT (RMS) ITSM I2t VFGM VRGM PGM PG (AV) Tj Tstg VISO
Ratings
V
3.0 4.7 60 18 1.5 5.0 5.0 0.5
Unit
V A A A A2 sec V V W W °C °C V
Conditions
Tj=–10 to +125°C, RGK=1kΩ 50Hz Half-cycle sinewave, 180°, Continuous current, Tc = 92°C 50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 2ms f f f t 10ms 10% 10% 50Hz, duty 50Hz 50Hz, duty
–10 to +125 –40 to +125
1500
50Hz Sine wave, RMS, Terminal to case, 1min.
VVDRM
Rank Ratings -C 20 -F 35 -G 45 -J 80 -K 100 -L 120 -M 145 -N 170 -O 190
sElectrical Characteristics
Parameter
Off-state current Breakover volta...
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