|
|
Power Amplifier. TG2006F Datasheet |
|
|
|
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2006F
1.9 GHz Band Power Amplifier
PHS, Digital Cordless Telecommunication
Features
l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V
l Low current consumption: It = 130 mA (typ.)
l Small package: SM8 package (2.9 × 2.8 × 1.1mm)
l Low cost: Can be achieved minimum function.
Pin Assignment (top view) Marking
TG2006F
Weight: 0.02 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Supply voltage
VDD1
VDD2
5
5
Gate voltage
VGG
1
Input power
Pi 10
Power dissipation
Pd (Note1)
250
Operating temperature range
Topr −40~85
Storage temperature range
Tstg −55~150
Note 1: When mounted on 2.5 cm2 × 1.6 t glass epoxy board.
Unit
V
V
V
mW
mW
°C
°C
1 2002-07-31
|
Classify Rank
This device is classified by Fig.1.
And satisfy ELECTRICAL CHARACTERISTICS by Vg Condition on each rank.
The rank division is performed for every reel and can't order to choose any rank.
Table 1
TG2006F
Rank
A
B
Vg Condition
Vg = 0 V
Vg = 1 V
Caution
This device is electrostatic sensitivity. Please handle with caution.
Electrical Characteristics
(Vd = 3 V, Vg = (Note2), f = 1.9 GHz, Ta = 25°C, Zg = ZI = 50 Ω, 1/2 duty operation) (Note 4)
Characteristics
Frequency
Total current
Gate current
Output power
Small signal gain
Adjacent channel leakage power ratio
Harmonics
Input VSWR
Load mismatch
Stability
Symbol
frange
It
IG
PO
GP
ACP (1)
ACP (2)
2f0
3f0
VSWRin
―
―
Test
Circuit
Test Condition
Min Typ. Max Unit
― ― 1895 ― 1918 MHz
1―
PO = 21dBmW, Pi = Regulation
1―
130 150
mA
―1
1 Pi = 1dBmW
1 Pi = −20dBmW
21 ― ― dBmW
21 23 ― dB
1 PO = 21dBmW, ∆f = 600 kHz ―
1
Pi = Regulation
(Note 3)
∆f = 900 kHz
―
−60 −55
−65 −60
dB
1―
PO = 21dBmW, Pi = Regulation
1―
― −30
dB
― −30
1 PO = 21dBmW, Pi = Regulation ― 1.5 2.5
Vd = 4.0V, Vg = (Note 2),
―
PO = 21dBmW,
Pi = Regulation, Zg = 50 Ω,
VSWR Load = 20 : 1 all phase
No Degradation
Vd = 2.7~4.0V, Vg = (Note 2),
― Pi = −2dBmW~4dBmW,
Zg = 50 Ω
VSWR Load = 6: 1 all phase
All spurious output than
60dB below desired
signal
―
―
―
Note 2: Vg Voltage is decided on Fig.1.
Note 3: Input signal is modulated to π/4QPSK (α = 0.5). Bit rate is 384 kbps.
Note 4: Vd = Vd1 = Vd2, It = Id1 + Id2
2 2002-07-31
|
Test Circuit 1 (RF test circuit)
TG2006F
Notice
The circuits and measurements contained in this document are given only in the context of as examples of
applications for these products.
Moreover, these example application circuits are not intended for mass production, since the high-frequency
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
It is the responsibility of the customer to design external circuits which correctly implement the intended
application, and to check the characteristics of the design.
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
3 2002-07-31
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |