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TG2006F Datasheet, Equivalent, Power Amplifier.1.9 GHz Band Power Amplifier 1.9 GHz Band Power Amplifier |
　
　
　
| Part | TG2006F |
|---|---|
| Description | 1.9 GHz Band Power Amplifier |
| Feature | TOSHIBA GaAs Linear Integrated Circuit G aAs Monolithic
TG2006F
1. 9 GHz Band Pow er Amplifier PHS, Digital Cordless Tele communication Features l Positive volta ge operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA ( typ. ) l Small package: SM8 package (2. 9 × 2. 8 × 1. 1mm) l Low cost: Can be ac hieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0 . 02 g (typ. ) Maximum Ratings (Ta = 25 °C) Characteristic Symbol Rating Su pply voltage VDD1 VDD2 5 5 Gate volt age VGG 1 Input power Pi 10 Power dissipation Pd (Note1) 250 Operating temperature rang . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | TG2006F |
|---|---|
| Description | 1.9 GHz Band Power Amplifier |
| Feature | TOSHIBA GaAs Linear Integrated Circuit G aAs Monolithic
TG2006F
1. 9 GHz Band Pow er Amplifier PHS, Digital Cordless Tele communication Features l Positive volta ge operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA ( typ. ) l Small package: SM8 package (2. 9 × 2. 8 × 1. 1mm) l Low cost: Can be ac hieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0 . 02 g (typ. ) Maximum Ratings (Ta = 25 °C) Characteristic Symbol Rating Su pply voltage VDD1 VDD2 5 5 Gate volt age VGG 1 Input power Pi 10 Power dissipation Pd (Note1) 250 Operating temperature rang . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
　
　
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