1.9 GHz Band Power Amplifier
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2006F
1.9 GHz Band Power Amplifier PHS, Digital Cordless Teleco...
Description
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2006F
1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
Features
l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ.) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function.
Pin Assignment (top view) Marking
TG2006F
Weight: 0.02 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Supply voltage
VDD1 VDD2
5 5
Gate voltage
VGG
1
Input power
Pi 10
Power dissipation
Pd (Note1)
250
Operating temperature range
Topr −40~85
Storage temperature range
Tstg −55~150
Note 1: When mounted on 2.5 cm2 × 1.6 t glass epoxy board.
Unit
V V V mW mW °C °C
1 2002-07-31
Classify Rank
This device is classified by Fig.1. And satisfy ELECTRICAL CHARACTERISTICS by Vg Condition on each rank. The rank division is performed for every reel and can't order to choose any rank.
Table 1
TG2006F
Rank
A B
Vg Condition
Vg = 0 V Vg = 1 V
Caution
This device is electrostatic sensitivity. Please handle with caution.
Electrical Characteristics (Vd = 3 V, Vg = (Note2), f = 1.9 GHz, Ta = 25°C, Zg = ZI = 50 Ω, 1/2 duty operation) (Note 4)
Characteristics Frequency Total current Gate current Output power Small signal gain Adjacent channel leakage power ratio
Harmonics Input VSWR
Load mismatch
Stability
Symbol frange
It IG PO GP ACP (1) ACP (2) 2f0 3f0 VSWRin
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Test Circuit
Test Condition
Min Typ. Max Unit
― ― 1...
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