Power Amplifier. TG2006F Datasheet

TG2006F Amplifier. Datasheet pdf. Equivalent

TG2006F Datasheet
Recommendation TG2006F Datasheet
Part TG2006F
Description 1.9 GHz Band Power Amplifier
Feature TG2006F; TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Dig.
Manufacture Toshiba Semiconductor
Datasheet
Download TG2006F Datasheet




Toshiba Semiconductor TG2006F
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2006F
1.9 GHz Band Power Amplifier
PHS, Digital Cordless Telecommunication
Features
l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V
l Low current consumption: It = 130 mA (typ.)
l Small package: SM8 package (2.9 × 2.8 × 1.1mm)
l Low cost: Can be achieved minimum function.
Pin Assignment (top view) Marking
TG2006F
Weight: 0.02 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Supply voltage
VDD1
VDD2
5
5
Gate voltage
VGG
1
Input power
Pi 10
Power dissipation
Pd (Note1)
250
Operating temperature range
Topr 40~85
Storage temperature range
Tstg 55~150
Note 1: When mounted on 2.5 cm2 × 1.6 t glass epoxy board.
Unit
V
V
V
mW
mW
°C
°C
1 2002-07-31



Toshiba Semiconductor TG2006F
Classify Rank
This device is classified by Fig.1.
And satisfy ELECTRICAL CHARACTERISTICS by Vg Condition on each rank.
The rank division is performed for every reel and can't order to choose any rank.
Table 1
TG2006F
Rank
A
B
Vg Condition
Vg = 0 V
Vg = 1 V
Caution
This device is electrostatic sensitivity. Please handle with caution.
Electrical Characteristics
(Vd = 3 V, Vg = (Note2), f = 1.9 GHz, Ta = 25°C, Zg = ZI = 50 , 1/2 duty operation) (Note 4)
Characteristics
Frequency
Total current
Gate current
Output power
Small signal gain
Adjacent channel leakage power ratio
Harmonics
Input VSWR
Load mismatch
Stability
Symbol
frange
It
IG
PO
GP
ACP (1)
ACP (2)
2f0
3f0
VSWRin
Test
Circuit
Test Condition
Min Typ. Max Unit
― ― 1895 1918 MHz
1
PO = 21dBmW, Pi = Regulation
1
130 150
mA
1
1 Pi = 1dBmW
1 Pi = 20dBmW
21 ― ― dBmW
21 23 dB
1 PO = 21dBmW, f = 600 kHz
1
Pi = Regulation
(Note 3)
f = 900 kHz
60 55
65 60
dB
1
PO = 21dBmW, Pi = Regulation
1
― −30
dB
― −30
1 PO = 21dBmW, Pi = Regulation 1.5 2.5
Vd = 4.0V, Vg = (Note 2),
PO = 21dBmW,
Pi = Regulation, Zg = 50 ,
VSWR Load = 20 : 1 all phase
No Degradation
Vd = 2.7~4.0V, Vg = (Note 2),
Pi = 2dBmW~4dBmW,
Zg = 50
VSWR Load = 6: 1 all phase
All spurious output than
60dB below desired
signal
Note 2: Vg Voltage is decided on Fig.1.
Note 3: Input signal is modulated to π/4QPSK (α = 0.5). Bit rate is 384 kbps.
Note 4: Vd = Vd1 = Vd2, It = Id1 + Id2
2 2002-07-31



Toshiba Semiconductor TG2006F
Test Circuit 1 (RF test circuit)
TG2006F
Notice
The circuits and measurements contained in this document are given only in the context of as examples of
applications for these products.
Moreover, these example application circuits are not intended for mass production, since the high-frequency
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
It is the responsibility of the customer to design external circuits which correctly implement the intended
application, and to check the characteristics of the design.
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
3 2002-07-31







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)