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Power Amplifier. TGA1045-EPU Datasheet |
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Advance Product Information
Ku Band Power Amplifier TGA1045-EPU
Key Features and Performance
• HFET Technology
• 12.5 -15.5 GHz Frequency Range
• > 3W Nominal Pout
• 24 dB Nominal Gain
• 9V @ 1.2A Bias
Parame te r
FREQUENCY RANGE
LINEAR GAIN AT 25°C
GAIN FLATNESS
P1dB AT 25°C
INP UT RETURN LOSS
OUTP UT RETURN LOSS
DC VOLTAGE
CURRENT
DC P OWER
Me as ure d (In Fixture )
13.0 - 15.5
24.0
< 2.0
~34.5
> 10
>8
+9
1.2 S ma ll Signa l
10.8
Units
GHz
dB
dB pp
dBm
dB
dB
Volts
A
W
Primary Applications
• Ku band Satellite Ground Terminal
• VSAT
• Point-to-Point Radio
Release Status
• Engineering Prototype Unit (EPU)
samples available August 1998
EG 1045 Fixtured Data
1 dB Compression Point
40
35
30
25 Average
20
15
10
10 11 12 13 14 15 16 17 18 19
Frequency (GHz)
Preliminary Pout Data
Chip Dimensions 4.69 mm x 3.35 mm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all
electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Vd 12
Vg 12
Advance Product Information
Vd 34
Recommended Assembly Diagram
Vg 34
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all
electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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