TGA1055-EPU

Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm TGA1055-EPU Primary Applications LMDS Point-to-Point Radio Satellite Ground Terminal Release Status Currently shipping Engineering Prototype Units EG1055B Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz 35 33 Output Power (dBm) & Gain (dB) 31 29 27 25 23 21 19 17 15 5 6 7 8 9 10 11 12 13 14 15 Input Power (dBm ) 20 18 16 14 12 10 8 6 4 2 0 Power Added Efficiency (%) Pout Gain PAE Chip Dimensions 5.89 mm x 3.66 mm Preliminary Pout, Gain and PAE Data at 29GHz Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 1 Advance Product Information TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information Chip Assembly and Bonding Diagram Reflow process assembly notes: AuSn (80/20) solder with limited exposure to temperatures at or above 300♣ C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in...