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TGA1055-EPU Datasheet, Equivalent, Power Amplifier.Ka Band 2 Watt Power Amplifier Ka Band 2 Watt Power Amplifier |
| Part | TGA1055-EPU |
|---|---|
| Description | Ka Band 2 Watt Power Amplifier |
| Feature | Advance Product Information
Ka Band 2 W att Power Amplifier
Key Features and Pe rformance
• • • • • • 0. 25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm S CL Bias 7V @ 1. 4 A Chip Dimensions 5. 89 mm x 3. 66 mm TGA1055-EPU Primary App lications • • • LMDS Point-to-Poi nt Radio Satellite Ground Terminal Rel ease Status • Currently shipping Engi neering Prototype Units EG1055B Bias T esting: Vd=7V, Id=1. 38A, T=25C, Freq=29 GHz 35 33 Output Power (dBm) & Gain (dB ) 31 29 27 25 23 21 19 17 15 5 6 7 8 9 10 11 12 13 14 15 Input Power (dBm ) 20 18 16 14 12 10 8 6 4 2 0 Power Ad . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
| Part | TGA1055-EPU |
|---|---|
| Description | Ka Band 2 Watt Power Amplifier |
| Feature | Advance Product Information
Ka Band 2 W att Power Amplifier
Key Features and Pe rformance
• • • • • • 0. 25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm S CL Bias 7V @ 1. 4 A Chip Dimensions 5. 89 mm x 3. 66 mm TGA1055-EPU Primary App lications • • • LMDS Point-to-Poi nt Radio Satellite Ground Terminal Rel ease Status • Currently shipping Engi neering Prototype Units EG1055B Bias T esting: Vd=7V, Id=1. 38A, T=25C, Freq=29 GHz 35 33 Output Power (dBm) & Gain (dB ) 31 29 27 25 23 21 19 17 15 5 6 7 8 9 10 11 12 13 14 15 Input Power (dBm ) 20 18 16 14 12 10 8 6 4 2 0 Power Ad . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
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