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Power Amplifier. TGA1055-EPU Datasheet |
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Advance Product Information
Ka Band 2 Watt Power Amplifier
TGA1055-EPU
Key Features and Performance
• 0.25 um pHEMT Technology
• 20 dB Nominal Gain
• 2W Nominal Pout
• -30 dBc IMR3 @ 26 dBm SCL
• Bias 7V @ 1.4 A
• Chip Dimensions 5.89 mm x 3.66 mm
EG1055B
Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz
35 20
33 18
31 16
29 14
27 12
25 10
23 8
21 6
19 4
17 2
15 0
5 6 7 8 9 10 11 12 13 14 15
Input Power (dBm )
Pout
Gain
PAE
Preliminary Pout, Gain and PAE Data at 29GHz
Primary Applications
• LMDS
• Point-to-Point Radio
• Satellite Ground Terminal
Release Status
• Currently shipping Engineering
Prototype Units
Chip Dimensions 5.89 mm x 3.66 mm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
Reflow process assembly notes:
Chip Assembly and Bonding Diagram
• AuSn (80/20) solder with limited exposure to temperatures at or above 300♣C
• alloy station or conveyor furnace with reducing atmosphere
• no fluxes should be utilized
• coefficient of thermal expansion matching is critical for long-term reliability
• storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
• vacuum pencils and/or vacuum collets preferred method of pick up
• avoidance of air bridges during placement
• force impact critical during auto placement
• organic attachment can be used in low-power applications
• curing should be done in a convection oven; proper exhaust is a safety concern
• microwave or radiant curing should not be used because of differential heating
• coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
• thermosonic ball bonding is the preferred interconnect technique
• force, time, and ultrasonics are critical parameters
• aluminum wire should not be used
• discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
• maximum stage temperature: 200♣C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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