Power Amplifier. TGA1055-EPU Datasheet

TGA1055-EPU Amplifier. Datasheet pdf. Equivalent

TGA1055-EPU Datasheet
Recommendation TGA1055-EPU Datasheet
Part TGA1055-EPU
Description Ka Band 2 Watt Power Amplifier
Feature TGA1055-EPU; Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance • • • • • •.
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1055-EPU Datasheet




TriQuint Semiconductor TGA1055-EPU
Advance Product Information
Ka Band 2 Watt Power Amplifier
TGA1055-EPU
Key Features and Performance
• 0.25 um pHEMT Technology
• 20 dB Nominal Gain
• 2W Nominal Pout
• -30 dBc IMR3 @ 26 dBm SCL
• Bias 7V @ 1.4 A
• Chip Dimensions 5.89 mm x 3.66 mm
EG1055B
Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz
35 20
33 18
31 16
29 14
27 12
25 10
23 8
21 6
19 4
17 2
15 0
5 6 7 8 9 10 11 12 13 14 15
Input Power (dBm )
Pout
Gain
PAE
Preliminary Pout, Gain and PAE Data at 29GHz
Primary Applications
• LMDS
• Point-to-Point Radio
• Satellite Ground Terminal
Release Status
• Currently shipping Engineering
Prototype Units
Chip Dimensions 5.89 mm x 3.66 mm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGA1055-EPU
Advance Product Information
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGA1055-EPU
Advance Product Information
Reflow process assembly notes:
Chip Assembly and Bonding Diagram
AuSn (80/20) solder with limited exposure to temperatures at or above 300C
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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