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Power Amplifier. TGA1071-EPU Datasheet |
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Advance Product Information
36 - 40 GHz Power Amplifier TGA1071-EPU
The TriQuint TGA1071-EPU is a two stage
PA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process to support a variety
of millimeter wave applications including
point-to-point digital radio and point-to-multipoint
systems.
The two-stage design consists of two 300 um input
devices driving a pair of 400 um output devices.
The TGA1071 provides 22dBm of output power
across 36-40 GHz with a typical small signal gain
of 15dB.
The TGA1071 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.
Key Features and Performance
• 0.25um pHEMT Technology
• 36-40 GHz Frequency Range
• 22 dBm Nominal Pout @ P1dB
• 15 dB Nominal Gain
• 5V, 120 mA Bias
• Chip Dimensions 3.4mm x 2.1mm
Primary Applications
• Point-to-Point Radio
• Point-Multipoint Radio
TGA1071 Typical RF Performance (Fixtured)
20
15
10
5
0
-5 s11
-10
-15
-20 s22
-25
32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0
Frequency (GHz)
Small Signal Gain
25.00
TGA1071 RF Probe Summary Data
20.00
15.00
10.00
5.00
0.00
36
37 38 39
Frequency (GHz)
40
Pout at 1dB Gain Compression
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
Symbol
V+
I+
PD
PIN
TCH
TM
TSTG
Parameter
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
7V
.4 A
2.8 W
20 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for both stages
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
Idss
VP1-5
BVGS1
BVGD1-5
Parameter
Saturated Drain Current (info
only)
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum Maximum Value
140 658 mA
-1.5 -0.5 V
-30 -8 V
-30 -8 V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol Parameter
Gp Small-signal
Power Gain
Test Condition
Vd=5V, Id=120mA
F = 36 to 40 GHz
F = 38 GHz
Limit
Min Nom Max
15
13
IRL Input Return F = 36 to 40 GHz - -10
Loss
ORL Output Return F = 36 to 40 GHz - -10
Loss
PWR Output Power F = 36 to 40 GHz
22
-
-
-
Units
dB
dB
dB
dB
dB
dBm
Note: RF probe data is taken at 0.4 GHz steps
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
2
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Advance Product Information
Statistical Performance Summary
TGA1071 RF Probe Summary Data
14
12
10
8
6
4
2
0
36.0 36.4 36.8 37.2 37.6 38.0 38.4 38.8 39.2 39.6 40.0
Small Signal Gain
Frequency (GHz)
25.00
TGA1071 RF Probe Summary Data
20.00
15.00
10.00
5.00
0.00
36
WOaufetrp9u81t 8P80o1w-2 er
37
38
Frequency (GHz)
39
40
678 devices
TGA1071 RF Probe Summary Data
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
36 36.4 36.8 37.2 37.6 38 38.4 38.8 39.2 39.6 40
Input Return Loss
Frequency (GHz)
TGA1071 RF Probe Summary Data
0
-2
-4
-6
-8
-10
-12
-14
-16
36 36.4 36.8 37.2 37.6 38 38.4 38.8 39.2 39.6 40
Frequency (GHz)
Output Return Loss
Freq
(GHz)
36.0
36.4
36.8
37.2
37.6
38.0
38.4
38.8
39.2
39.6
40.0
S11
Mag
0.593
0.569
0.508
0.448
0.328
0.191
0.086
0.202
0.324
0.460
0.567
S11
Ang
88.8
83.3
75.6
66.9
59.0
48.8
-18.0
-147.6
-159.9
-170.3
179.8
S21
Mag
5.060
5.037
5.174
5.327
5.142
5.109
5.480
5.274
4.896
4.527
3.929
S21
Ang
-116.0
-136.2
-156.1
-172.3
170.3
151.1
132.6
108.3
88.1
67.1
47.1
S12
Mag
0.024
0.030
0.031
0.035
0.036
0.036
0.040
0.036
0.032
0.029
0.023
Typical s-parameters
S12
Ang
179.8
163.2
148.6
133.6
119.4
106.1
90.8
69.8
55.1
44.9
27.3
S22
Mag
0.215
0.210
0.182
0.159
0.228
0.293
0.353
0.494
0.554
0.566
0.576
S22
Ang
125.6
122.5
136.4
151.4
170.4
180.0
-175.6
174.7
166.0
161.5
157.2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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