Power Amplifier. TGA1073G-SCC Datasheet

TGA1073G-SCC Amplifier. Datasheet pdf. Equivalent

TGA1073G-SCC Datasheet
Recommendation TGA1073G-SCC Datasheet
Part TGA1073G-SCC
Description 19 - 27 GHz Medium Power Amplifier
Feature TGA1073G-SCC; Product Datasheet August 15, 2000 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features an.
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1073G-SCC Datasheet




TriQuint Semiconductor TGA1073G-SCC
Product Datasheet
August 15, 2000
19 - 27 GHz Medium Power Amplifier
TGA1073G-SCC
The TriQuint TGA1073G-SCC is a three stage
MPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process. The TGA1073G
is designed to support a variety of millimeter wave
applications including point-to-point digital radio
and point-to-multipoint communications.
The three stage design consists of a 200 um input
device driving a 480um interstage device
followed by an 800um output device.
The TGA1073G provides 25dBm nominal
output power at 1dB compression across
19-27GHz. Typical small signal gain is 22 dB.
The TGA91073G requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.
Key Features and Performance
• 0.25 um pHEMT Technology
• 22 dB Nominal Gain
• 25 dBm Nominal Pout @ P1dB
• Bias 5-7V @ 220 mA
• Chip Dimensions 2.55 mm x 1.15mm
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
25
20
15 S21
10
5
0
-5
-10 S11
-15
-20
-25 S22
-30
18 19 20 21 22 23 24 25 26 27 28
Frequency (GHz)
28
24
20
16
12
8
4
0
19 20 21 22 23 24 25 26 27 28 29
Frequency (GHz)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
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TriQuint Semiconductor TGA1073G-SCC
MAXIMUM RATINGS
SYMBOL
V+
I+
PIN
PD
TCH
TM
TSTG
PARAMETER 5/
POSITIVE SUPPLY VOLTAGE
POSSITIVE SUPPLY CURRENT
INPUT CONTINUOUS WAVE POWER
POWER DISSIPATION
OPERATING CHANNEL TEMPERATURE
MOUNTING TEMPERATURE
(30 SECONDS)
STORAGE TEMPERATURE
Product Datasheet
August 15, 2000
VALUE
8V
296 mA
23 dBm
2.37 W
150 0C
320 0C
-65 to 150 0C
NOTES
1/
4/
2/ 3/
1/ Total current for all stages.
2/ These ratings apply to each individual FET.
3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ This value reflects an estimate. Actual value will be inserted as soon as it is determined.
5/ These ratings represent the maximum operable values for the device.
NOTES SYMBOL
IDSS3
GM3
1/ |VP1|
1/ |VP2|
1/ |VP3|
1/ |VBVGD1|
1/ |VBVGS1|
DC SPECIFICATIONS (100%)
(TA = 25 °C + 5 °C)
TEST CONDITIONS 2/
STD
STD
STD
STD
STD
STD
STD
LIMITS
MIN
MAX
80 376
176 424
0.5 1.5
0.5 1.5
0.5 1.5
11 30
11 30
UNITS
mA
mS
V
V
V
V
V
1/ VP, VBVGD, and VBVGS are negative.
2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate
notification to the buyer).
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
rev 11/10/98



TriQuint Semiconductor TGA1073G-SCC
NOTE
TEST
1/ SMALL-SIGNAL
GAIN MAGNITUDE
POWER OUTPUT
AT 1 dB GAIN
COMPRESSION
1/ INPUT RETURN LOSS
MAGNITUDE
1/ OUTPUT RETURN LOSS
MAGNITUDE
2/ OUTPUT THIRD ORDER
INTERCEPT
Product Datasheet
August 15, 2000
RF SPECIFICATIONS
(TA = 25°C + 5°C)
MEASUREMENT
CONDITIONS
6V @ 220mA
19 GHz
20 – 25 GHz
20 GHz
22 GHz
23.5 GHz
19 – 25 GHz
VALUE
MIN TYP MAX
16 20
19 23
21 23
24 25
24 26
-20
UNITS
dB
dB
dBm
dBm
dBm
dB
19 – 25 GHz
-15 dB
32 dBm
1/ RF probe data is taken at 1 GHz steps.
PARAMETER
RθJC
Thermal resistance
(channel to backside of
c/p)
RELIABILITY DATA
BIAS CONDITIONS
VD (V)
ID (mA)
6 220
PDISS
(W)
1.32
RθJC
(C/W)
71.7
TCH
(°C)
149.6
TM
(HRS)
1.0 E6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20mil CuMo Carrier at 55°C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
rev 11/10/98







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