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TGA1082B

TriQuint Semiconductor

27- 32 GHz 1.5 Watt Power Amplifier

Advance Product Information 27- 32 GHz 1.5 Watt Power Amplifier Key Features • • • • • • TGA1082B Prototype Part #, Pr...


TriQuint Semiconductor

TGA1082B

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Description
Advance Product Information 27- 32 GHz 1.5 Watt Power Amplifier Key Features TGA1082B Prototype Part #, Production Part # TBD 0.25 um pHEMT Technology 22 dB Nominal Gain at 30GHz 1W Nominal Pout @ P1dB 1.5W Psat at 30GHz Bias 6 - 7V @ 960 mA Chip Dimensions 4.13mm x 3.3mm Primary Applications The TriQuint TGA1082B-EPU is a three stage HPA MMIC design using TriQuint’s proven 0.25 um Power pHEMT process. The TGA1082B is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS and Ka band satellite ground terminals. The TGA1082B provides 30 dBm nominal output power at 1dB compression across 27-32GHz. Typical small signal gain is 22 dB at 30GHz. The TGA1082B requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. 32 30 P1dB (dBm) 28 26 24 22 20 18 28 29 30 Frequency (GHz) 31 32 Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com 30 28 26 24 22 20 18 16 28 29 30 Frequency (GHz) 31 32 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice Gain (dB) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information Note: Devices designated as EPU are typically early in their charact...




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