Power Amplifier. TGA1135B Datasheet

TGA1135B Amplifier. Datasheet pdf. Equivalent

TGA1135B Datasheet
Recommendation TGA1135B Datasheet
Part TGA1135B
Description 18-27.5 GHz 1W Power Amplifier
Feature TGA1135B; Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0..
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1135B Datasheet




TriQuint Semiconductor TGA1135B
Advance Product Information
Feb 4, 2000
18-27.5 GHz 1W Power Amplifier
TGA1135B
Key Features
• 0.25 um pHEMT Technology
• 14 dB Nominal Gain at 23GHz
• 30 dBm Nominal P1dB
• 38dBm OTOI typical
• Typical 15dB Input/Output RL
• Bias 6 - 7V @ 540 mA
• On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data
Wafer 993150303, 6V/540mA
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
32
31.5
31
VD = 7V
30.5
30
29.5
VD = 6V
29
28.5
28
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
27.5
27
16 17 18 19 20 21 22 23 24 25 26 27 28 29
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1



TriQuint Semiconductor TGA1135B
S21
S11
S22
Advance Product Information
Feb 4, 2000
Measured small signal data
6V, 540mA
TGA1135B
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
,
-5
-7
-9
-11
-13
-15
-17
-19
-21
-23
-25
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
-5
-7
-9
-11
-13
-15
-17
-19
-21
-23
-25
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2



TriQuint Semiconductor TGA1135B
Advance Product Information
Feb 4, 2000
TGA1135B
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
32
31.5
31
VD = 7V
30.5
30
29.5
VD = 6V
29
28.5
28
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
27.5
27
16 17 18 19 20 21 22 23 24 25 26 27 28 29
Frequency (GHz)
P1dB Measured Data
43
42
41
40
39
38
37
36
35
34
33
17
TGA1135B wafer 993150303 nominal performance
TOI performance @ Pin SCL=7dBm: Vd=6V, Id=540mA, separation = 10MHz
18 19 20 21 22 23 24 25 26 27
Frequency (GHz)
28
Output TOI Measured Data
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3







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