TGA1135B

Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 30 dBm Nominal P1dB 38dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA 18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 31 30.5 P1dB (dBm) 30 29.5 29 28.5 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) Note: 1 dB of compression not reached on some parts at 27, 27.5 GHz VD = 7V VD = 6V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information Feb 4, 2000 Measured small signal data 6V, 540mA 18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) , TGA1135B S21 -5 -7 -9 -11 S11 S11 (dB) -13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Fr...