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TGA1135B Datasheet, Equivalent, Power Amplifier.

18-27.5 GHz 1W Power Amplifier

18-27.5 GHz 1W Power Amplifier

 

 

 

Part TGA1135B
Description 18-27.5 GHz 1W Power Amplifier
Feature Advance Product Information Feb 4, 2000 18-27.
5 GHz 1W Power Amplifier TGA113 5B Key Features
• 0.
25 um pHEMT Tech nology
• 14 dB Nominal Gain at 23GHz
• 30 dBm Nominal P1dB
• 38dBm OTOI typical
• Typical 15dB Input/Output R L
• Bias 6 - 7V @ 540 mA
• On-chip power detector diode Chip Dimensions 2.
641 mm x 1.
480 mm Primary Applications
• Point-to-Point Radio
• Point-to- Multipoint Communications
• Ka Band S at-Com TGA1135B Fixtured Amplifier Typ ical Small Signal Data Wafer 993150303, 6V/540mA 18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 3 .
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1135B Datasheet
Part TGA1135B
Description 18-27.5 GHz 1W Power Amplifier
Feature Advance Product Information Feb 4, 2000 18-27.
5 GHz 1W Power Amplifier TGA113 5B Key Features
• 0.
25 um pHEMT Tech nology
• 14 dB Nominal Gain at 23GHz
• 30 dBm Nominal P1dB
• 38dBm OTOI typical
• Typical 15dB Input/Output R L
• Bias 6 - 7V @ 540 mA
• On-chip power detector diode Chip Dimensions 2.
641 mm x 1.
480 mm Primary Applications
• Point-to-Point Radio
• Point-to- Multipoint Communications
• Ka Band S at-Com TGA1135B Fixtured Amplifier Typ ical Small Signal Data Wafer 993150303, 6V/540mA 18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 3 .
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1135B Datasheet

TGA1135B

TGA1135B
TGA1135B

TGA1135B

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